參數(shù)資料
型號(hào)： AM29BDS320GTD4VMI
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
封裝： 8 X 9 MM, 0.80 MM PITCH, FBGA-64
文件頁數(shù)： 28/74頁
文件大?。?/td> 701K
代理商： AM29BDS320GTD4VMI
26
Am29BDS320G
27243B1 October 1, 2003
P r e l i m i n a r y
Figure 1. Synchronous/Asynchronous State Diagram
Read Mode Setting
On power-up or hardware reset, the device is set to be in asynchronous read
mode. This setting allows the system to enable or disable burst mode during sys-
tem operations. Address A19 determines this setting: “1’ for asynchronous mode,
“0” for synchronous mode.
Programmable W ait State Configuration
The programmable wait state feature informs the device of the number of clock
cycles that must elapse after AVD# is driven active before data will be available.
This value is determined by the input frequency of the device. Address bits A14–
A12 determine the setting (see
Table 8
).
The wait state command sequence instructs the device to set a particular number
of clock cycles for the initial access in burst mode. The number of wait states that
should be programmed into the device is directly related to the clock frequency.
Power-up/
Hardware Reset
Asynchronous Read
Mode Only
Synchronous Read
Mode Only
Set Burst Mode
Configuration Register
Command for
Synchronous Mode
(A19 = 0)
Set Burst Mode
Configuration Register
Command for
Asynchronous Mode
(A19 = 1)
相關(guān)PDF資料
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