- 您現(xiàn)在的位置：買賣IC網 > PDF目錄375289 > AM29BDS320GBD8VMI (SPANSION LLC) 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BDS320GBD8VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 39/74頁 |
| 文件大小： | 701K |
| 代理商： | AM29BDS320GBD8VMI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁當前第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁
October 1, 2003 27243B1
Am29BDS320G
37
P r e l i m i n a r y
Write Operation Status
The device provides several bits to determine the status of a program or erase
operation: DQ2, DQ3, DQ5, DQ6, and DQ7.
Table 16, “Write Operation Status,”
on page 42
and the following subsections describe the function of these bits. DQ7
and DQ6 each offers a method for determining whether a program or erase op-
eration is complete or in progress.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Program or Erase algorithm is in progress or completed, or whether a bank is in
Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse
in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 μs, then that bank returns to the read mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.
When the Embedded Erase algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide
an address within any of the sectors selected for erasure to read valid status in-
formation on DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 μs, then the
bank returns to the read mode. If not all selected sectors are protected, the Em-
bedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected. However, if the system reads DQ7 at an address within
a protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7
may change asynchronously with DQ6–DQ0 while Output Enable (OE#) is as-
serted low. That is, the device may change from providing status information to
valid data on DQ7. Depending on when the system samples the DQ7 output, it
may read the status or valid data. Even if the device has completed the program
or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 may
be still invalid. Valid data on DQ7–DQ0 will appear on successive read cycles.
Table 16
shows the outputs for Data# Polling on DQ7. Figure 3 shows the Data#
Polling
alg orithm .
F ig ure 2 7 ,
(During Embedded Algorithm),” on page 64
in the AC Characteristics section
shows the Data# Polling timing diagram.
“ D ata#
Polling
T im ing s
相關PDF資料 |
PDF描述 |
|---|---|
| AM29BDS320GBD9VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC4VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC8VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC9VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTD3VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。