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參數(shù)資料
| 型號： | AM29BDS320GBC4VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 3/74頁 |
| 文件大?。?/td> | 701K |
| 代理商： | AM29BDS320GBC4VMI |
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Publication Number
27243
Revision
B
Amendment
1
Issue Date
October 1, 2003
PRELIMINARY
Am29BDS320G
32 Megabit (2 M x 16-Bit), 1.8 Volt-only
Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
S ingle 1.8 volt read, program and erase ( 1.65 to
1.95 volt)
Manufactured on 0.17 μm process technology
Enhanced V ersatileI O ( V
IO
) Feature
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
— 1.8V and 3V compatible I/O signals
S imultaneous Read/ W rite operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture: 8Mb/8Mb/8Mb/8Mb
Programmable Burst I nterface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
S ector Architecture
— Eight 8 Kword sectors and sixty-two 32 Kword
sectors
— Banks A and D each contain four 8 Kword sectors and
fifteen 32 Kword sectors; Banks B and C each contain
sixteen 32 Kword sectors
— Eight 8 Kword boot sectors, four at the top of the
address range, and four at the bottom of the address
range
Minimum 1 million erase cycle guarantee per
sector
20-year data retention at 125°C
— Reliable operation for the life of the system
64-ball FBGA package
Performance Charcteristics
Read access times at 54/ 40 MHz ( at 30 pF)
— Burst access times of 13.5/20 ns
— Asynchronous random access times of 70 ns
— Initial Synchronous access times as fast as 87.5/95 ns
Pow er dissipation ( typical values, C
L
= 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 μA
Hardw are Features
Sector Protection
— Software command sector locking
Reduced W ait-S tate Handshaking feature available
— Provides host system with minimum possible latency
by monitoring RDY
Hardw are reset input ( RES ET# )
— Hardware method to reset the device for reading
array data
W P# input
— Write protect (WP#) function protects sectors 0 and 1
(bottom boot), or sectors 68 and 69 (top boot),
regardless of sector protect status
ACC input: Acceleration function reduces
programming time; all sectors locked w hen ACC =
V
I L
CMOS compatible inputs, CMOS compatible outputs
Low V
CC
w rite inhibit
Softw are Features
Supports Common Flash Memory I nterface ( CFI )
Softw are command set compatible w ith J EDEC
42.4 standards
— Backwards compatible with Am29F and Am29LV
families
Data# Polling and toggle bits
— Provides a software method of detecting program
and erase operation completion
Erase S uspend/ Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
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