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參數(shù)資料
| 型號： | Am29BDD160GT64C |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數(shù)： | 75/80頁 |
| 文件大?。?/td> | 3476K |
| 代理商： | AM29BDD160GT64C |
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Am29BDD160G
73
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25°C, 2.5 V V
CC
, 1M cycles. Additionally, programming
typically assume checkerboard pattern.
2.
Under worst case conditions of 145°C, V
CC
= 2.5 V, 100,000 cycles.
3.
The typical chip programming time is considerably less than the maximum chip programming time listed.
4.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Tables 19 and 20 for further information on command definitions.
6.
The device has a minimum erase and program cycle endurance of 1M cycles.
7.
PPBs have a minimum program/erase cycle endurance of 100 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
PQFP AND FORTIFIED BGA PIN CAPACITANCE
Note:
1.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Sampled, not 100% tested.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1.0
5
s
Excludes 00h
programming prior to
erasure (Note 4)
Chip Erase Time
23
230
s
Double Word Program Time
18
250
μs
Excludes system level
overhead (Note 5)
Word (x16) Program Time
15
210
μs
Accelerated Double Word Program Time
8
130
μs
Accelerated Chip Program Time
5
50
s
Chip Program Time
(Note 3)
x16
10
100
x32
12
120
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
V
CC
+ 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C
10
Years
125°C
20
Years
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