參數(shù)資料
型號(hào): AM29BDD160GB20DKE
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 16兆位(1 M中的x 16-bit/512畝× 32位),2.5伏的CMOS只突發(fā)模式,雙啟動(dòng),同步讀/寫閃存
文件頁數(shù): 74/79頁
文件大小: 1368K
代理商: AM29BDD160GB20DKE
72
Am29BDD160G
June 7, 2006
ERA
S
E AND PROGRAMMING PERFORMANCE
Notes:
1
.
Typ
i
c
a
l progr
a
m
a
nd er
as
e t
i
me
s
assu
me the follow
i
ng cond
i
t
i
on
s:
25
°
C, 2
.
5 V V
CC
, 1M cycle
s.
Add
i
t
i
on
a
lly, progr
a
mm
i
ng
typ
i
c
a
l
s
assu
me checker
b
o
a
rd p
a
ttern
.
2
.
Under wor
s
t c
as
e cond
i
t
i
on
s
of 145°C, V
CC
= 2
.
5 V, 100,000 cycle
s.
3
.
The typ
i
c
a
l ch
i
p progr
a
mm
i
ng t
i
me
is
con
si
der
ab
ly le
ss
th
a
n the m
a
x
i
m
u
m ch
i
p progr
a
mm
i
ng t
i
me l
is
ted
.
4
.
In the pre-progr
a
mm
i
ng
s
tep of the Em
b
edded Er
as
e
a
lgor
i
thm,
a
ll
b
yte
s
a
re progr
a
mmed to 00h
b
efore er
asu
re
.
5
.
Sy
s
tem-level overhe
a
d
is
the t
i
me re
qui
red to exec
u
te the two- or fo
u
r-
bus
-cycle
s
e
qu
ence for the progr
a
m comm
a
nd
.
See
T
ab
le
s
19
a
nd 20 for f
u
rther
i
nform
a
t
i
on on comm
a
nd def
i
n
i
t
i
on
s.
6
.
The dev
i
ce h
as
a
m
i
n
i
m
u
m er
as
e
a
nd progr
a
m cycle end
u
r
a
nce of 1M cycle
s.
7
.
PPB
s
h
a
ve
a
m
i
n
i
m
u
m progr
a
m/er
as
e cycle end
u
r
a
nce of 100 cycle
s.
LATCHUP CHARACTERI
S
TIC
S
Incl
u
de
s
a
ll p
i
n
s
except V
CC
.
Te
s
t cond
i
t
i
on
s:
V
CC
= 3
.
0 V, one p
i
n
a
t
a
t
i
me
.
PQFP AND FORTIFIED BGA PIN CAPACITANCE
Notes:
1
.
S
a
mpled, not 100% te
s
ted
.
2
.
Te
s
t cond
i
t
i
on
s
T
A
= 25°C, f = 1
.
0 MHz
.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Un
i
t
Comment
s
S
ector Er
as
e T
i
me
1
.
0
5
s
Excl
u
de
s
00h progr
a
mm
i
ng
pr
i
or to er
asu
re (Note 4)
Ch
i
p Er
as
e T
i
me
2
3
2
3
0
s
Do
ub
le Word Progr
a
m T
i
me
1
8
250
μs
Excl
u
de
s
s
y
s
tem level
overhe
a
d (Note 5)
Word (x16) Progr
a
m T
i
me
15
210
μs
Acceler
a
ted Do
ub
le Word Progr
a
m T
i
me
8
1
3
0
μs
Acceler
a
ted Ch
i
p Progr
a
m T
i
me
5
50
s
Ch
i
p Progr
a
m T
i
me
(Note
3
)
x16
10
100
s
x
3
2
12
120
De
s
cr
i
pt
i
on
M
i
n
Max
Inp
u
t volt
a
ge w
i
th re
s
pect to V
SS
on
a
ll p
i
n
s
except I/O p
i
n
s
(
i
ncl
u
d
i
ng A
9
, ACC,
a
nd WP#)
–1
.
0 V
12
.
5 V
Inp
u
t volt
a
ge w
i
th re
s
pect to V
SS
on
a
ll I/O p
i
n
s
–1
.
0 V
V
CC
+ 1
.
0 V
V
CC
C
u
rrent
–100 mA
+100 mA
Parameter
S
ymbol
Parameter De
s
cr
i
pt
i
on
Te
s
t
S
etup
Typ
Max
Un
i
t
C
IN
Inp
u
t C
a
p
a
c
i
t
a
nce
V
IN
= 0
6
7
.
5
pF
C
OUT
O
u
tp
u
t C
a
p
a
c
i
t
a
nce
V
OUT
= 0
8.
5
12
pF
C
IN2
Control P
i
n C
a
p
a
c
i
t
a
nce
V
IN
= 0
7
.
5
9
pF
Parameter
Te
s
t Cond
i
t
i
on
s
M
i
n
Un
i
t
M
i
n
i
m
u
m P
a
ttern D
a
t
a
Retent
i
on T
i
me
150
°
C
10
Ye
a
r
s
125
°
C
20
Ye
a
r
s
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