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參數(shù)資料
| 型號(hào)： | AM29BDD160GB20CPBI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動(dòng)，同步讀/寫閃存 |
| 文件頁(yè)數(shù)： | 43/79頁(yè) |
| 文件大?。?/td> | 1368K |
| 代理商： | AM29BDD160GB20CPBI |
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June 7, 2006
Am29BDD160G
41
S
ec
Si
S
ector Entry Command
The
S
ec
Si
S
ector Entry comm
a
nd en
ab
le
s
the
S
ec
Si
(OTP)
s
ector to overl
a
y the
8
KB o
u
termo
s
t
s
ector
i
n
the
s
m
a
ll (25
%
)
ba
nk
.
The
S
ec
Si
s
ector overl
a
y
s
00000h–000
3
Fh for the top
b
oot
b
lock conf
i
g
u
r
a
t
i
on
a
nd 7FFC0h–7FFFFh for the
b
ottom
b
oot
b
lock conf
iu
-
r
a
t
i
on
.
Addre
ss
r
a
nge 00040h–007FFh for the top
b
oot
b
lock
a
nd 7F
8
00h–7FFBFh ret
u
rn
i
nv
a
l
i
d d
a
t
a
when
a
ddre
ss
ed w
i
th the
S
ec
Si
s
ector en
ab
led
.
The
follow
i
ng comm
a
nd
s
a
re perm
i
tted
a
fter
issui
ng the
S
ec
Si
S
ector Entry comm
a
nd
:
1
.
A
u
to
s
elect
2
.
P
ass
word Progr
a
m (x16
a
nd x
3
2)
3.
P
ass
word Ver
i
fy
4
.
P
ass
word Unlock (x16
a
nd x
3
2)
5
.
Re
a
d/Re
s
et
6
.
Progr
a
m
7
.
Ch
i
p
a
nd
S
ector Er
as
e
8. S
ec
Si
S
ector Protect
i
on B
i
t Progr
a
m
9.
PPB Progr
a
m
10
.
All PPB Er
as
e
11
.
PPB Lock B
i
t
S
et
12
.
DYB Wr
i
te
1
3.
DYB/PPB/PPB Lock B
i
t Ver
i
fy
14
.S
ec
u
r
i
ty Re
s
et
15
.
Conf
i
g
u
r
a
t
i
on Reg
is
ter Wr
i
te
16
.
Conf
i
g
u
r
a
t
i
on Reg
is
ter Re
a
d
The follow
i
ng comm
a
nd
s
a
re
u
n
a
v
ai
l
ab
le when the
S
ec
Si
s
ector
is
en
ab
led
.
I
ssui
ng the follow
i
ng com-
m
a
nd
s
wh
i
le the
S
ec
Si
s
ector
is
en
ab
led re
su
lt
s
i
n the
comm
a
nd
b
e
i
ng
i
gnored
.
1
.
Unlock Byp
ass
2
.
CFI
3.
Acceler
a
ted Progr
a
m
4
.
Progr
a
m
a
nd
S
ector Er
as
e
Sus
pend
5
.
Progr
a
m
a
nd
S
ector Er
as
e Re
su
me
The
S
ec
Si
S
ector Entry comm
a
nd
is
a
llowed when the
dev
i
ce
is
i
n e
i
ther progr
a
m or er
as
e
sus
pend mode
s.
If
the
S
ec
Si
s
ector
is
en
ab
led, the progr
a
m or er
as
e
sus
-
pend comm
a
nd
is
i
gnored
.
Th
is
prevent
s
re
su
m
i
ng e
i
-
ther progr
a
mm
i
ng or er
asu
re on the
S
ec
Si
s
ector
i
f the
overl
a
yed
s
ector w
as
u
ndergo
i
ng progr
a
mm
i
ng or er
a
-
su
re
.
The ho
s
t
s
y
s
tem mu
s
t en
s
ure that the dev
i
ce
re
s
ume any
s
u
s
pended pro
g
ram or era
s
e opera-
t
i
on after ex
i
t
i
n
g
the
S
ec
Si
s
ector
.
Exec
u
t
i
ng
a
ny of the PPB progr
a
m/er
as
e comm
a
nd
s
,
or P
ass
word Unlock comm
a
nd re
su
lt
s
i
n the
s
m
a
ll
ba
nk (25
%
ba
nk) ret
u
rn
i
ng the
s
t
a
t
us
of the
s
e oper
a
-
t
i
on
s
wh
i
le they
a
re
i
n progre
ss
, th
us
m
a
k
i
ng the
S
ec
Si
s
ector
u
n
a
v
ai
l
ab
le for re
a
d
i
ng
.
If the
S
ec
Si
s
ec-
tor
is
en
ab
led wh
i
le the DYB comm
a
nd
is
issu
ed, the
DYB for the overl
a
yed
s
ector
is
NOT
u
pd
a
ted
.
Re
a
d-
i
ng the DYB
s
t
a
t
us
usi
ng the PPB Lock B
i
t/DYBDYB
ver
i
fy comm
a
nd when the
S
ec
Si
s
ector
is
en
ab
led re-
t
u
rn
s
i
nv
a
l
i
d d
a
t
a.
Pa
ss
word Pro
g
ram Command
The P
ass
word Progr
a
m Comm
a
nd perm
i
t
s
progr
a
m-
m
i
ng the p
ass
word th
a
t
is
us
ed
as
p
a
rt of the h
a
rd-
w
a
re protect
i
on
s
cheme
.
The
a
ct
ua
l p
ass
word
is
64-
bi
t
s
long
.
Depend
i
ng
u
pon the
s
t
a
te of the WORD#
p
i
n, m
u
lt
i
ple P
ass
word Progr
a
m Comm
a
nd
s
a
re re-
qui
red
.
For
a
x16
bi
t d
a
t
a
bus
, 4 P
ass
word Progr
a
m
comm
a
nd
s
a
re re
qui
red to progr
a
m the p
ass
word
.
For
a
x
3
2
bi
t d
a
t
a
bus
, 2 P
ass
word Progr
a
m comm
a
nd
s
a
re re
qui
red
.
The
us
er m
us
t enter the
u
nlock cycle,
p
ass
word progr
a
m comm
a
nd (
38
h)
a
nd the progr
a
m
a
ddre
ss
/d
a
t
a
for e
a
ch port
i
on of the p
ass
word when
progr
a
mm
i
ng
.
There
a
re no prov
isi
on
s
for enter
i
ng the
2-cycle
u
nlock cycle, the p
ass
word progr
a
m com-
m
a
nd,
a
nd
a
ll the p
ass
word d
a
t
a.
There
is
no
s
pec
ia
l
a
ddre
ssi
ng order re
qui
red for progr
a
mm
i
ng the p
ass
-
word
.
Al
s
o, when the p
ass
word
is
u
ndergo
i
ng pro-
gr
a
mm
i
ng,
Si
m
u
lt
a
neo
us
Oper
a
t
i
on
is
d
isab
led
.
Re
a
d
oper
a
t
i
on
s
to
a
ny memory loc
a
t
i
on w
i
ll ret
u
rn the pro-
gr
a
mm
i
ng
s
t
a
t
us.
Once progr
a
mm
i
ng
is
complete, the
us
er m
us
t
issu
e
a
Re
a
d/Re
s
et comm
a
nd to ret
u
rn the
dev
i
ce to norm
a
l oper
a
t
i
on
.
Once the P
ass
word
is
wr
i
tten
a
nd ver
i
f
i
ed, the P
ass
word Mode Lock
i
ng B
i
t
m
us
t
b
e
s
et
i
n order to prevent ver
i
f
i
c
a
t
i
on
.
The P
ass
-
word Progr
a
m Comm
a
nd
is
only c
a
p
ab
le of progr
a
m-
m
i
ng “0”
s.
Progr
a
mm
i
ng
a
“1”
a
fter
a
cell
is
progr
a
mmed
as
a
“0” re
su
lt
s
i
n
a
t
i
me-o
u
t
b
y the Em-
b
edded Progr
a
m Algor
i
thm w
i
th the cell rem
ai
n
i
ng
as
a
“0”
.
The p
ass
word
is
a
ll F’
s
when
s
h
i
pped from
the f
a
ctory
.
All 64-
bi
t p
ass
word com
bi
n
a
t
i
on
s
a
re v
a
l
i
d
as
a
p
ass
word
.
P
ass
word Progr
a
mm
i
ng
is
perm
i
tted
i
f the
S
ec
Si
s
ec-
tor
is
en
ab
led
.
Pa
ss
word Ver
i
fy Command
The P
ass
word Ver
i
fy Comm
a
nd
is
us
ed to ver
i
fy the
P
ass
word
.
The P
ass
word
is
ver
i
f
iab
le only when the
P
ass
word Mode Lock
i
ng B
i
t
is
not progr
a
mmed
.
If the
P
ass
word Mode Lock
i
ng B
i
t
is
progr
a
mmed
a
nd the
us
er
a
ttempt
s
to ver
i
fy the P
ass
word, the dev
i
ce w
i
ll
a
lw
a
y
s
dr
i
ve
a
ll F’
s
onto the DQ d
a
t
a
bus.
The P
ass
word Ver
i
fy comm
a
nd
is
perm
i
tted
i
f the
S
ec
Si
s
ector
is
en
ab
led
.
Al
s
o, the dev
i
ce w
i
ll not oper-
a
te
i
n
Si
m
u
lt
a
neo
us
Oper
a
t
i
on when the P
ass
word
Ver
i
fy comm
a
nd
is
exec
u
ted
.
Only the p
ass
word
is
re-
t
u
rned reg
a
rdle
ss
of the
ba
nk
a
ddre
ss.
The lower two
a
ddre
ss
bi
t
s
(A0
:
A-1)
a
re v
a
l
i
d d
u
r
i
ng the P
ass
word
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB20CPBK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20DKE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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