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參數(shù)資料
| 型號： | AM29BDD160GB17CPBE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數(shù)： | 46/79頁 |
| 文件大?。?/td> | 1368K |
| 代理商： | AM29BDD160GB17CPBE |
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44
Am29BDD160G
June 7, 2006
PPB
S
tatu
s
The progr
a
mm
i
ng of the PPB for
a
g
i
ven
s
ector c
a
n
b
e
ver
i
f
i
ed
b
y wr
i
t
i
ng
a
PPB
s
t
a
t
us
ver
i
fy comm
a
nd to the
dev
i
ce
.
PPB Lock B
i
t
S
tatu
s
The progr
a
mm
i
ng of the PPB Lock B
i
t for
a
g
i
ven
s
ec-
tor c
a
n
b
e ver
i
f
i
ed
b
y wr
i
t
i
ng
a
PPB Lock B
i
t
s
t
a
t
us
ver
i
fy comm
a
nd to the dev
i
ce
.
Non-volat
i
le Protect
i
on B
i
t Pro
g
ram And
Era
s
e Flow
The dev
i
ce
us
e
s
a
s
t
a
nd
a
rd comm
a
nd
s
e
qu
ence for
progr
a
mm
i
ng or er
asi
ng the
S
ec
Si
S
ector Protect
i
on,
P
ass
word Lock
i
ng, Per
sis
tent
S
ector Protect
i
on Mode
Lock
i
ng, or Per
sis
tent Protect
i
on B
i
t
s.
Unl
i
ke dev
i
ce
s
th
a
t h
a
ve the
Si
ngle H
i
gh Volt
a
ge
S
ector Unpro-
tect/Protect fe
a
t
u
re, the Am2
9
BDD160 h
as
the
s
t
a
n-
d
a
rd two-cycle
u
nlock followed
b
y 60h, wh
i
ch pl
a
ce
s
the dev
i
ce
i
nto non-vol
a
t
i
le
bi
t progr
a
m or er
as
e mode
.
Once the mode
is
entered, the
s
pec
i
f
i
c non-vol
a
t
i
le
bi
t
s
t
a
t
us
is
re
a
d on DQ0
.
F
i
g
u
re 4
s
how
s
a
typ
i
c
a
l flow
for progr
a
mm
i
ng the non-vol
a
t
i
le
bi
t
a
nd F
i
g
u
re 5
s
how
s
a
typ
i
c
a
l flow for er
asi
ng the non-vol
a
t
i
le
bi
t
s.
The
S
ec
Si
S
ector Protect
i
on, P
ass
word Lock
i
ng, Per-
sis
tent
S
ector Protect
i
on Mode Lock
i
ng
bi
t
s
a
re
not
era
s
able
a
fter they
a
re progr
a
mmed
.
However, the
PPB
s
a
re
b
oth er
asab
le
a
nd progr
a
mm
ab
le (depend-
i
ng
u
pon dev
i
ce
s
ec
u
r
i
ty)
.
Unl
i
ke
Si
ngle H
i
gh Volt
a
ge
S
ector Protect/Unprotect,
the A6 p
i
n no longer f
u
nct
i
on
s
as
the progr
a
m/er
as
e
s
elector nor the progr
a
m/er
as
e m
a
rg
i
n en
ab
le
.
In-
s
te
a
d, th
is
f
u
nct
i
on
is
a
ccompl
is
hed
b
y
issui
ng the
s
pec
i
f
i
c comm
a
nd for e
i
ther progr
a
m (6
8
h) or er
as
e
(60h)
.
In
as
ynchrono
us
mode, the DQ6 toggle
bi
t
i
nd
i
c
a
te
s
whether the progr
a
m or er
as
e
s
e
qu
ence
is
a
ct
i
ve
.
(In
s
ynchrono
us
mode, ADV#
i
nd
i
c
a
te
s
the
s
t
a
t
us.
) If the
DQ6 toggle
bi
t toggle
s
w
i
th e
i
ther OE# or CE#, the
non-vol
a
t
i
le
bi
t progr
a
m or er
as
e oper
a
t
i
on
is
i
n
progre
ss.
When DQ6
s
top
s
toggl
i
ng, the v
a
l
u
e of the
non-vol
a
t
i
le
bi
t
is
a
v
ai
l
ab
le on DQ0
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB17CPBF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17CPBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17CPBK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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參數(shù)描述 |
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