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    參數(shù)資料
    型號(hào): AM29BDD160GB17AKK
    廠商: Advanced Micro Devices, Inc.
    英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
    中文描述: 16兆位(1 M中的x 16-bit/512畝× 32位),2.5伏的CMOS只突發(fā)模式,雙啟動(dòng),同步讀/寫閃存
    文件頁數(shù): 56/79頁
    文件大?。?/td> 1368K
    代理商: AM29BDD160GB17AKK
    54
    Am29BDD160G
    June 7, 2006
    DC CHARACTERI
    S
    TIC
    S
    CMO
    S
    Compat
    i
    ble
    Notes:
    1
    .
    2
    .
    3
    .
    4
    .
    The I
    CC
    c
    u
    rrent l
    is
    ted
    i
    ncl
    u
    de
    s
    b
    oth the DC oper
    a
    t
    i
    ng c
    u
    rrent
    a
    nd the fre
    qu
    ency dependent component
    .
    I
    CC
    a
    ct
    i
    ve wh
    i
    le Em
    b
    edded Er
    as
    e or Em
    b
    edded Progr
    a
    m
    is
    i
    n progre
    ss.
    Not 100% te
    s
    ted
    .
    M
    a
    x
    i
    m
    u
    m I
    CC
    s
    pec
    i
    f
    i
    c
    a
    t
    i
    on
    s
    a
    re te
    s
    ted w
    i
    th V
    CC
    = V
    CCm
    a
    x
    .
    C
    u
    rrent m
    a
    x
    i
    m
    u
    m h
    as
    b
    een
    i
    ncre
    as
    ed
    si
    gn
    i
    f
    i
    c
    a
    ntly from d
    a
    t
    as
    heet Rev
    isi
    on B+4, D
    a
    ted Apr
    i
    l 8, 2003
    .
    5
    .
    Parameter
    De
    s
    cr
    i
    pt
    i
    on
    Te
    s
    t Cond
    i
    t
    i
    on
    s
    M
    i
    n
    Typ
    Max
    Un
    i
    t
    I
    LI
    Inp
    u
    t Lo
    a
    d C
    u
    rrent
    V
    IN
    = V
    SS
    to V
    IO
    , V
    IO
    = V
    IO m
    a
    x
    ±
    1
    .
    0
    μ
    A
    I
    LIWP
    Inp
    u
    t Lo
    a
    d C
    u
    rrent, WP#
    V
    IN
    = V
    SS
    to V
    IO
    , V
    IO
    = V
    IO m
    a
    x
    –25
    μ
    A
    I
    LO
    O
    u
    tp
    u
    t Le
    a
    k
    a
    ge C
    u
    rrent
    V
    OUT
    = V
    SS
    to V
    CC
    , V
    CC
    = V
    CC m
    a
    x
    ±
    1
    .
    0
    μ
    A
    I
    CCB
    V
    CC
    Act
    i
    ve B
    u
    r
    s
    t Re
    a
    d C
    u
    rrent
    (Note 1)
    CE# = V
    IL
    ,
    OE# = V
    IL
    56 MHz
    8
    Do
    ub
    le-Word
    70
    9
    0
    mA
    66 MHz
    I
    CC1
    V
    Act
    i
    ve A
    s
    ynchrono
    us
    Re
    a
    d C
    u
    rrent
    (Note 1)
    CE# = V
    IL
    ,OE# = V
    IL
    1 MHz
    4
    mA
    I
    CC
    3
    V
    CC
    Act
    i
    ve Progr
    a
    m C
    u
    rrent (Note
    s
    2, 4) CE# = V
    IL
    ,OE# = V
    IH
    , ACC = V
    IH
    40
    50
    mA
    I
    CC4
    V
    CC
    Act
    i
    ve Er
    as
    e C
    u
    rrent (Note
    s
    2, 4)
    CE# = V
    IL
    ,OE# = V
    IH
    , ACC = V
    IH
    20
    50
    mA
    I
    CC5
    (Note 5)
    V
    CC
    S
    t
    a
    nd
    b
    y C
    u
    rrent (CMO
    S
    )
    V
    CC
    = V
    CC m
    a
    x
    , CE# = V
    CC
    ±
    0
    .3
    V
    60
    μ
    A
    I
    CC6
    V
    CC
    Act
    i
    ve C
    u
    rrent (Re
    a
    d Wh
    i
    le Wr
    i
    te)
    CE# = V
    IL
    ,OE# = V
    IL
    3
    0
    9
    0
    mA
    I
    CC7
    (Note 5)
    V
    CC
    Re
    s
    et C
    u
    rrent
    RE
    S
    ET# = V
    IL
    60
    μ
    A
    I
    CC
    8
    (Note 5)
    A
    u
    tom
    a
    t
    i
    c
    S
    leep Mode C
    u
    rrent
    V
    IH
    = V
    CC
    ±
    0
    .3
    V, V
    IL
    = V
    SS
    ±
    0
    .3
    V
    60
    μ
    A
    I
    ACC
    V
    ACC
    Acceler
    a
    t
    i
    on C
    u
    rrent
    ACC = V
    HH
    20
    mA
    V
    IL
    Inp
    u
    t Low Volt
    a
    ge
    –0
    .
    5
    0
    .3
    x V
    IO
    V
    V
    IH
    Inp
    u
    t H
    i
    gh Volt
    a
    ge
    0
    .
    7 x V
    IO
    3.
    6
    V
    V
    ILCLK
    CLK Inp
    u
    t Low Volt
    a
    ge
    –0
    .
    2
    0
    .3
    x V
    IO
    V
    V
    IHCLK
    CLK Inp
    u
    t H
    i
    gh Volt
    a
    ge
    0
    .
    7 x V
    CC
    2
    .
    75
    V
    V
    ID
    Volt
    a
    ge for A
    u
    to
    s
    elect
    V
    CC
    = 2
    .
    5 V
    11
    .
    5
    12
    .
    5
    V
    V
    OL
    O
    u
    tp
    u
    t Low Volt
    a
    ge
    I
    OL
    = 4
    .
    0 mA, V
    CC
    = V
    CC m
    i
    n
    0
    .
    45
    V
    I
    OLRB
    RY/BY#, O
    u
    tp
    u
    t Low C
    u
    rrent
    V
    OL
    = 0
    .
    4 V
    8
    mA
    V
    HH
    Acceler
    a
    ted (ACC p
    i
    n) H
    i
    gh Volt
    a
    ge
    I
    OH
    = –2
    .
    0 mA, V
    CC
    = V
    CC m
    i
    n
    0
    .8
    5 x V
    CC
    V
    V
    OH
    O
    u
    tp
    u
    t H
    i
    gh Volt
    a
    ge
    I
    OH
    = –100
    μ
    A, V
    CC
    = V
    CC m
    i
    n
    V
    IO
    –0
    .
    1
    V
    V
    LKO
    Low V
    CC
    Lock-O
    u
    t Volt
    a
    ge (Note
    3
    )
    1
    .
    6
    2
    .
    0
    V
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