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參數(shù)資料
| 型號： | AM28F512A-90PIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Hex Inverters 14-SO -40 to 85 |
| 中文描述： | 512千比特（64畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁數(shù)： | 15/34頁 |
| 文件大?。?/td> | 463K |
| 代理商： | AM28F512A-90PIB |
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22
Am28F512A
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. Caution: The Am28F512A must not be removed from (or inserted into) a socket when VCC or VPP is applied. If VCC ≤ 1.0 volt,
the voltage difference between VPP and VCC should not exceed 10.0 volts. Also, the Am28F512A has a VPP rise time and fall
time specification of 500 ns minimum.
2. ICC1 is tested with OE# = VIH to simulate open outputs.
3. Maximum active power usage is the sum of ICC and IPP.
4. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VCC = VCC Max, VIN = VCC or VSS
±1.0
A
ILO
Output Leakage Current
VCC = VCC Max, VOUT = VCC or VSS
±1.0
A
ICCS
VCC Standby Current
VCC = VCC Max, CE# = VCC + 0.5 V
15
100
A
ICC1
VCC Active Read Current
VCC = VCC Max, CE# = VIL, OE# = VIH
IOUT = 0 mA, at 6 MHz
20
30
mA
ICC2
VCC Programming Current
CE
# = VIL
Programming in Progress (Note 4)
20
30
mA
ICC3
VCC Erase Current
CE
# = VIL
Erasure in Progress (Note 4)
20
30
mA
IPPS
VPP Standby Current
VPP = VPPL
±1.0
A
IPP1
VPP Read Current
VPP = VPPH
70
200
A
IPP2
VPP Programming Current
VPP = VPPH
Programming in Progress (Note 4)
10
30
mA
IPP3
VPP Erase Current
VPP = VPPH
Erasure in Progress (Note 4)
10
30
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC Min
0.45
V
VOH1
Output High Voltage
IOH = –2.5 mA, VCC = VCC Min
0.85 VCC
V
VOH2
IOH = –100 A, VCC = VCC Min
VCC –0.4
VID
A9 Auto Select Voltage
A9 = VID
11.5
13.0
V
IID
A9 Auto Select Current
A9 = VID Max, VCC = VCC Max
5
50
A
VPPL
VPPL during Read-Only
Operations
Note: Erase/Program are inhibited
when VPP = VPPL
0.0
VCC + 2.0
V
VPPH
VPP during Read/Write
Operations
11.4
12.6
V
VLKO
Low VCC Lock-out Voltage
3.2
3.7
V
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