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參數(shù)資料
| 型號： | AM28F512A-120EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 64K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 7/34頁 |
| 文件大?。?/td> | 463K |
| 代理商： | AM28F512A-120EC |
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Am28F512A
7
PIN DESCRIPTION
A0–A15
A
ddress Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE
#
(E
#
)
Chip Enable active low input activates the chip’s con-
trol logic and input buffers. Chip Enable high will dese-
lect the device and operates the chip in stand-by mode.
DQ0–DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE
#
(G
#
)
Output Enable active low input gates the outputs of the
device through the data buffers during memory read
cycles. Output Enable is high during command
sequencing and program/erase operations.
V
CC
Power supply for device operation. (5.0 V
±
5% or 10%)
V
PP
Program voltage input. V
PP
must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the mem-
ory array contents. Memory contents cannot be altered
when V
PP
≤
V
CC
+2 V.
V
SS
Ground.
WE
#
(W
#
)
Write Enable active low input controls the write function
of the command register to the memory array. The tar-
get address is latched on the falling edge of the Write
Enable pulse and the appropriate data is latched on the
rising edge of the pulse. Write Enable high inhibits
writing to the device.
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