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參數(shù)資料
| 型號(hào)： | AM28F256A-70FCB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 256千比特（32畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁(yè)數(shù)： | 31/35頁(yè) |
| 文件大?。?/td> | 456K |
| 代理商： | AM28F256A-70FCB |
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Am28F256A
31
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
25°C, 12 V V
PP
.
2. Maximum time specified is lower than worst case. Worst case is derived from the Embedded Algorithm internal counter which
allows for a maximum 6000 pulses for both program and erase operations. Typical worst case for program and erase is
significantly less than the actual device limit.
3. Typical worst case = 84 μs. DQ5 = “1” only after a byte takes longer than 96 ms to program.
LATCHUP CHARACTERISTICS
PIN CAPACITANCE
Note:
Sampled, not 100% tested. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Limits
Comments
Min
Typ
(Note 1)
Max
(Note 2)
Unit
Chip Erase Time
1
10
sec
Excludes 00h programming prior to erasure
Chip Programming Time
0.5
12.5
sec
Excludes system-level overhead
Write/Erase Cycles
100,000
Cycles
Byte Programming Time
14
μs
96
(Note 3)
ms
Parameter
Min
Max
Input Voltage with respect to V
SS
on all pins except I/O pins (Including A9 and V
PP
)
–1.0 V
13.5 V
Input Voltage with respect to V
SS
on all pins I/O pins
–1.0 V
V
CC
+ 1.0 V
Current
–100 mA
+100 mA
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time.
Parameter
Symbol
Parameter Description
Test Conditions
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
12
pF
C
IN2
V
PP
Input Capacitance
V
PP
= 0
8
12
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C
10
Years
125°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F256A-70FE | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70FEB | Synchronous 4-Bit Up/Down Binary Counters 16-PDIP 0 to 70 |
| AM28F256A-70FI | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70FIB | 4-by-4 register files with 3-state outputs 16-SOIC 0 to 70 |
| AM28F256A-70JC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256A-70FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70FEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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