參數(shù)資料
型號(hào)： AM28F256A-150PI
廠(chǎng)商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述： 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
封裝： PLASTIC, DIP-32
文件頁(yè)數(shù)： 7/35頁(yè)
文件大小： 456K
代理商： AM28F256A-150PI
Am28F256A
7
PIN DESCRIPTION
A0–A14
Address Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE
#
(E
#
)
Chip Enable active low input activates the chip’s control
logic and input buffers. Chip Enable high will deselect
the device and operates the chip in stand-by mode.
DQ0-DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE
#
(G
#
)
Output Enable active low input gates the outputs of the
device through the data buffers during memory read
cycles. Output Enable is high during command
sequencing and program/erase operations.
V
CC
Power supply for device operation. (5.0 V
±
5% or 10%)
V
PP
Program voltage input. V
PP
must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the mem-
ory array contents. Memory contents cannot be altered
when V
PP
≤
V
CC
+2 V.
V
SS
Ground.
WE
#
(W)
Write Enable active low input controls the write function
of the command register to the memory array. The target
address is latched on the falling edge of the Write En-
able pulse and the appropriate data is latched on the ris-
ing edge of the pulse. Write Enable high inhibits writing
to the device.
相關(guān)PDF資料
PDF描述
AM28F256A-150PIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-70JCB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-70JE 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-70JI 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-70JIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256A-150PIB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200DI 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 Flash EEPROM
AM28F256A-200EC 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200ECB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200EE 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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