參數(shù)資料
型號(hào)： AM28F256-90ECB
廠(chǎng)商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述： 32K X 8 FLASH 12V PROM, 90 ns, PDSO32
封裝： 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32
文件頁(yè)數(shù)： 27/35頁(yè)
文件大?。?/td> 493K
代理商： AM28F256-90ECB
Am28F256
27
AC Characteristics—Write/Erase/Program Operations
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Maximum pulse widths not required because the on-chip program/erase stop timer will terminate the pulse widths internally
on the device.
3. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of Chip-Enable and Write-Enable. In
systems where Chip-Enable defines the Write Pulse Width (within a longer Write-Enable timing waveform) all setup, hold and
inactive Write-Enable times should be measured relative to the Chip-Enable waveform.
4. Not 100% tested.
Parameter Symbols
Parameter Description
Am28F256 Speed Options
Unit
JEDEC
Standard
-70
-90
-120
-150
-200
t
AVAV
t
WC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
t
AVWL
t
AS
Address Set-up Time
Min
0
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
60
75
ns
t
DVWH
t
DS
Data Setup Time
Min
45
45
50
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
10
10
10
10
10
ns
t
WHGL
t
WR
Write Recovery Time
before Read
Min
6
6
6
6
6
μs
t
GHWL
Read Recovery Time
before Write
Min
0
0
0
0
0
μs
t
ELWL
t
CS
Chip Enable Set-up Time
Min
0
0
0
0
0
ns
t
WHEH
t
CH
Chip Enable Hold Time
Min
0
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
45
45
50
60
60
ns
t
WHWL
t
WPH
Write Pulse
Width HIGH
Min
20
20
20
20
20
ns
t
WHWH1
Duration of Programming
Operation (Note 2)
Min
10
10
10
10
10
μs
t
WHWH2
Duration of
Erase Operation (Note 2)
Min
9.5
9.5
9.5
9.5
9.5
ms
t
VPEL
V
PP
Setup Time to
Chip Enable LOW (Note 4)
Min
100
100
100
100
100
ns
t
VCS
V
CC
Set-up Time to
Chip Enable LOW (Note 4)
Min
50
50
50
50
50
μs
t
VPPR
V
PP
Rise Time
90% V
PPH
(Note 4)
Min
500
500
500
500
500
ns
t
VPPF
V
PP
Fall Time
10% V
PPL
(Note 4)
Min
500
500
500
500
500
ns
t
LKO
V
CC
< V
LKO
to Reset (Note 4)
Min
100
100
100
100
100
ns
相關(guān)PDF資料
PDF描述
AM28F256-90EE 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90EEB Octal bus transceivers 20-PDIP 0 to 70
AM28F256-90EI 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90EIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256-90EE 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90EEB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90EI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90EIB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90FC 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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