- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄366386 > AM28F020A-90FI (ADVANCED MICRO DEVICES INC) 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms PDF資料下載
參數(shù)資料
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)當(dāng)前第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)
Am28F020A
25
AC Characteristics—Write (Erase/Program) Operations
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded Program Operation of 14 μs consists of 10 μs program pulse and 4 μs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded Erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Am28F020A Speed Options
JEDEC
Standard
Description
-70
-90
-120
-150
-200
Unit
t
AVAV
t
WC
Write Cycle Time (4)
Min
70
90
120
150
200
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
60
75
ns
t
DVWH
t
DS
Data Setup Time
Min
45
45
50
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
10
10
10
10
10
ns
t
OEH
Output Enable Hold Time for Embedded
Algorithm only
Min
10
10
10
10
10
ns
t
GHWL
Read Recovery Time Before Write
Min
0
0
0
0
0
ns
t
ELWLE
t
CSE
CE# Embedded Algorithm Setup Time
Min
20
20
20
20
20
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
45
45
50
60
60
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
20
20
20
ns
t
WHWH3
Embedded Program Operation (2)
Min
14
14
14
14
14
μs
t
WHWH4
Embedded Erase Operation (3)
Typ
5
5
5
5
5
sec
t
VPEL
V
PP
Setup Time to Chip Enable Low (4)
Min
100
100
100
100
100
ns
t
VCS
V
CC
Setup Time (4)
Min
50
50
50
50
50
μs
t
VPPR
V
PP
Rise Time (4) 90% V
PPH
Min
500
500
500
500
500
ns
t
VPPF
V
PP
Fall Time (4) 90% V
PPL
Min
500
500
500
500
500
ns
t
LKO
V
CC
< V
LKO
to Reset (4)
Min
100
100
100
100
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F020A-90FIB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JC | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JCB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JE | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F020A-90FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-90JEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。