參數(shù)資料
型號: AM28F020A-120JEB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述: 256K X 8 FLASH 12V PROM, 120 ns, PQCC32
封裝: PLASTIC, LCC-32
文件頁數(shù): 24/35頁
文件大小: 470K
代理商: AM28F020A-120JEB
24
Am28F020A
SWITCHING TEST WAVEFORMS
SWITCHING CHARACTERISTICS over operating range, unless otherwise specified
AC Characteristics—Read-Only Operations
Notes:
1. Guaranteed by design; not tested.
2. Not 100% tested
Parameter
Symbols
Am28F020A Speed Options
JEDEC
Standard Parameter Description
-70
-90
-120
-150
-200
Unit
t
AVAV
t
RC
Read Cycle Time (Note 3)
Min
70
90
120
150
200
ns
t
ELQV
t
CE
Chip Enable Access Time
Max
70
90
120
150
200
ns
t
AVQV
t
ACC
Address Access Time
Max
70
90
120
150
200
ns
t
GLQV
t
OE
Output Enable Access Time
Max
35
35
50
55
55
ns
t
ELQX
t
LZ
Chip Enable to Output in Low Z
(2)
Min
0
0
0
0
0
ns
t
EHQZ
t
DF
Chip Disable to Output in High Z
(1)
Max
20
20
30
35
35
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z (2)
Min
0
0
0
0
0
ns
t
GHQZ
t
DF
Output Disable to Output in High Z (2)
Max
20
20
30
35
35
ns
t
AXQX
t
OH
Output Hold Time From First Address, CE#,
or OE# change (2)
Min
0
0
0
0
0
ns
t
VCS
V
CC
Set-up Time to Valid Read (2)
Min
50
50
50
50
50
ns
17502D-17
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
AC Testing for -70 devices: Inputs are driven at 3.0 V for a
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times
are
10 ns.
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
AC Testing (all speed options except -70): Inputs are driven at
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise
and fall times are
10 ns.
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參數(shù)描述
AM28F020A-120JI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-120JIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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