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參數(shù)資料
| 型號(hào)： | AM28F020A-120ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA |
| 中文描述： | 2兆位（256畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁數(shù)： | 10/35頁 |
| 文件大小： | 470K |
| 代理商： | AM28F020A-120ECB |
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10
Am28F020A
READ-ONLY MODE
When V
PP
is less than V
CC
+ 2 V, the command register
is inactive. The device can either read array or autose-
lect data, or be standby mode.
Read
The device functions as a read only memory when V
PP
< V
CC
+ 2 V.
The device has two control functions. Both
must be satisfied in order to output data. CE# controls
power to the device. This pin should be used for spe-
cific device selection. OE# controls the device outputs
and should be used to gate data to the output pins if a
device is selected.
Address access time t
ACC
is equal to the delay from
stable addresses to valid output data. The chip enable
access time t
CE
is the delay from stable addresses and
stable CE# to valid data at the output pins. The output
enable access time is the delay from the falling edge of
OE# to valid data at the output pins (assuming the ad-
dresses have been stable at least t
ACC
- t
OE
).
Standby Mode
The device has two standby modes. The CMOS
standby mode (CE# input held at V
CC
±
0.5 V), con-
sumes less than 100 μA of current. TTL standby mode
(CE# is held at V
IH
) reduces the current requirements
to less than 1 mA. When in the standby mode the out-
puts are in a high impedance state, independent of the
OE# input.
If the device is deselected during erasure, program-
ming, or program/erase verification, the device will
draw active current until the operation is terminated.
Output Disable
Output from the device is disabled when OE# is at a
logic high level. When disabled, output pins are in a
high impedance state.
Auto Select
Flash memories can be programmed in-system or in a
standard PROM programmer. The device may be sol-
dered to the circuit board upon receipt of shipment and
programmed in-system. Alternatively, the device may
initially be programmed in a PROM programmer prior
to soldering the device to the board.
The Auto select mode allows the reading out of a binary
code from the device that will identify its manufacturer and
type. This mode is intended for the purpose of automati-
cally matching the device to be programmed with its cor-
responding programming algorithm. This mode is
functional over the entire temperature range of the device.
Programming In A PROM Programmer
To activate this mode, the programming equipment
must force V
ID
(11.5 V to 13.0 V) on address A9. Two
identifier bytes may then be sequenced from the device
outputs by toggling address A0 from V
IL
to V
IH
. All other
address lines must be held at V
IL
, and V
PP
must
be
less than or equal to V
CC
+ 2.0 V while using this Auto
select mode. Byte 0 (A0 = V
IL
) represents the manufac-
turer code and byte 1 (A0 = V
IH
) the device identifier
code. For the device the two bytes are given in the table
2 of the device data sheet. All identifiers for manufac-
turer and device codes will exhibit odd parity with the
MSB (DQ7) defined as the parity bit.
Table 2.
(Am28F020A Auto Select Code
Type
A0
Code
(HEX)
Manufacturer Code
V
IL
01
Device Code
V
IH
29
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PDF描述 |
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| AM28F020A-150JI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F020A-120EE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-120EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-120EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-120EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-120FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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