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參數(shù)資料
| 型號： | AM28F010-90JEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 2/35頁 |
| 文件大?。?/td> | 492K |
| 代理商： | AM28F010-90JEB |
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2
Am28F010
minutes required for EPROM erasure using ultra-violet
light are eliminated.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as inputs to an internal state-machine
which controls the erase and programming circuitry.
During write cycles, the command register internally
latches address and data needed for the programming
and erase operations. For system design simplifica-
tion, the Am28F010 is designed to support either WE#
or CE# controlled writes. During a system write cycle,
addresses are latched on the falling edge of WE# or
CE# whichever occurs last. Data is latched on the ris-
ing edge of WE# or CE# whichever occurs first. To
simplify the following discussion, the WE# pin is used
as the write cycle control pin throughout the rest of
this text. All setup and hold times are with respect to
the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F010 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM pro-
gramming mechanism of hot electron injection.
BLOCK DIAGRAM
PRODUCT SELECTOR GUIDE
Family Part Number
Am28F010
Speed Options (V
CC
= 5.0 V
±
10%)
-70
-90
-120
-150
-200
Max Access Time (ns)
70
90
120
150
200
CE
#
(E
#
) Access (ns)
70
90
120
150
200
OE
#
(G
#
) Access (ns)
35
35
50
55
55
Erase Voltage
Switch
Input/Output
Buffers
Data
Latch
Y-Gating
1,048,576 Bit
Cell Matrix
X-Decoder
Y-Decoder
A
Chip Enable
Output Enable
Logic
Program
Voltage Switch
State
Control
Command
Register
WE
#
CE
#
OE
#
A0–A16
DQ0–DQ7
V
CC
V
SS
11559H-1
Low V
Detector
Program/Erase
Pulse Timer
V
PP
To Array
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F010-90JI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90JIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-90JI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90JIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-90PC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90PCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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