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參數(shù)資料
| 型號： | AM1214-250 |
| 英文描述： | RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
| 中文描述： | RF功率晶體管L波段雷達(dá)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 33K |
| 代理商： | AM1214-250 |
1/4
TARGET DATA
July 2000
AM1214-250
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY /GOLD METALLIZATION
EMITTER SITE BALLASTING
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
= 300 W MIN. WITH 8.0 dB GAIN
1215-1400 MHz OPERATION
DESCRIPTION
The AM1214-250 is a rugged, Class C common
base device designed for new L - Band medium &
long pulse radar applications.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
PIN CONNECTION
1
3
4
2
1. Collector
2. Base
3. Emitter
4. Base
M259
hermetically sealed
ORDER CODE
AM1214-250
BRANDING
XAM1214-250
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
P
DISS
Power Dissipation (T
C
≤
85
°
C)*
I
C
Device Current*
V
CBO
Collector-Base Voltage
T
j
Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
786
W
21
A
70
V
+250
°
C
-65 to +200
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance*
0.21
°
C/W
* Applies only to rated RF amplifier operation: 150 microsec / 10%
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相關(guān)代理商/技術(shù)參數(shù) |
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| AM1214-325 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
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