
ALD1108E/ALD1110E
Advanced Linear Devices
4
PROGRAMMING CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
Programmable Vt Range
Vt
1.000
3.000
1.000
3.000
V
Resolution of V t
Programming
RV t
0.1
1
0.1
1
mV
Change in Vt Per
Vt / N
0.5
mV/ pulse
Vt = 1.0V
Programming Pulse
0.05
Vt = 2.5V
Programming Voltage
Vp
11.75
12.00
12.25
11.75
12.00
12.25
V
Programming Current
Ip
2
mA
Pulse Frequency
pulse
50
KHZ
Transconductance
gm
1.4
mA/V
VD = 10V,VG =Vt + 4.0
Transconductance Match
gm
25
A/V
VD = 10V,VG =Vt + 4.0
Low Level Output
Conductance
gOL
66
A/V
VG = Vt +0.5V
High Level Output
Conductance
gOH
68
A/V
VG = Vt +4.0V
Drain Off Leakage Current
ID(OFF)
5
400
5
400
pA
44
nA
TA = 125°C
Gate Leakage Current
IGSS
10
100
10
100
pA
11
nA
TA = 125°C
Input Capacitance
CISS
25
pF
Cross Talk
60
dB
f = 100KHz
Relaxation Time Constant
tRLX
2
Hours
Relaxation Voltage
VRLX
-0.3
%
1.0V
≤ Vt ≤ 3.0V
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions