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參數(shù)資料
| 型號： | AK5328192Z |
| 廠商： | Accutek Microcircuit Corporation |
| 英文描述： | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| 中文描述： | 262,144 × 8位馬鞍山動態(tài)隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 111K |
| 代理商： | AK5328192Z |
DESCRIPTION
The Accutek AK48256 high density memory modules is a random
access memory organized in 256K x 8 bit words. The assembly
consists of eight standard 256K x 1 DRAMs in plastic leaded chip
carriers (PLCC) mounted on the front side of a printed circuit board.
Themodulecanbeconfiguredasaleadless30padSIMoraleaded
30 pin SIP. This packaging approach provides a 6 to 1 density in-
crease over standard DIP packaging.
TheoperationoftheAK48256isidenticaltoeight256Kx1DRAMs.
The data input is tied to the data output and brought out separately
for each device, with common RAS, CAS and WE control. This
commonI/Ofeaturedictatestheuseofearly-writecyclestoprevent
contentionofDandQ. SincetheWrite-Enable(WE)signalmustal-
ways go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
FEATURES
262,144 by 8 bit organization
Optional 30 Pad leadless SIM (Single In-Line Module) or 30
Pin leaded SIP (Single In-Line Package)
JEDEC standard pinout
Each device has common D and Q lines with common RAS,
CAS and WE control
2.8 Watt active and 180 mW standby (max)
Operating free air temperature 0
0
C to 70
0
C
Upward compatible with AK481024, AK581024, AK584096 and
AK5816384
Functionally and Pin compatible with AK58256A
Accutek
Microcircuit
Corporation
AK48256S / AK48256G
262,144 X 8 Bit MOS
Dynamic Random Access Memory
1
30
1
Front View
30-Pin SIM
30-Pin SIP
PIN NOMENCLATURE
A
0
- A
8
Address Inputs
DQ
1
- DQ
8
Data In / Data Out
CAS
Column Address Strobe
RAS
Row Address Strobe
WE
Write Enable
Vcc
5v Supply
Vss
Ground
NC
No Connect
MODULE OPTIONS
Leadless SIM: AK48256S
Leaded SIP: AK48256G
PIN ASSIGNMENT
PIN #
SYMBOL
PIN #
SYMBOL
1
Vcc
16
DQ5
2
CAS
17
A8
3
DQ!
18
NC
4
A0
19
NC
5
A1
20
DQ6
6
DQ2
21
WE
7
A2
22
Vss
8
A3
23
DQ7
9
Vss
24
NC
10
DQ3
25
DQ8
11
A4
26
NC
12
A5
27
RAS
13
DQ4
28
NC
14
A6
29
NC
15
A7
30
Vcc
FUNCTIONAL DIAGRAM
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| AK5361024D | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK5361024G | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK5361024S | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK5361024W | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK5361024Z | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
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