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參數(shù)資料
| 型號： | AHK6030LX |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:26; Series:MS27472; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 30V的N溝道功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 244K |
| 代理商： | AHK6030LX |
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030LX
30V N-Channel Power MOSFET
6030LX.2001.05.0.91
General Description
Utilizing
TrenchDMOS
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Analogic
process, the AHK6030LX sets a
Tech’s
state-of-the-art
Gate charge and R
DS(ON)
have been optimized and
package inductance minimized to provide high
efficiency for DC-DC.
Applications
=
DC-DC converters for CPU’s
=
High Current Load Switch
Features
=
V
DS(MAX)
= 30V
=
I
D(MAX)
=
I
APP(MAX)
= 20A in typical computer application
=
Low Gate Charge
=
Low R
DS(ON)
:
10.5 m
=
(max), 9.5 m
=
(typ)@V
GS
= 10V
18 m
=
(max), 14 m
=
(typ)@ V
GS
= 4.5V
(a)
= 52 A @ 25
°
C
DPAK-L Package
DPAK Package
Absolute Maximum Ratings
(T
A
=25
°
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Description
Value
30
±
20
±
52
±
56
23
42
27
-55 to 150
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150
°
C
(a)
Pulsed Drain Current
(a)
Continuous Source Current (Source-Drain Diode)
(a)
V
A
T
A
= 25
°
C
T
A
= 70
°
C
P
D
Maximum Power Dissipation
(a)
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
°
C
Thermal Resistance
R
θ
JA
R
θ
JC
Maximum Junction-to-Ambient
(a)
Maximum Junction-to-Case
(a)
96
3.6
°
C/W
°
C/W
G
S
Drain-Connected Tab
G
S
Drain-Connected Tab
PWMSwitch
TM
9-19
P
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AHK6030LXINY-T1 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:30V N-Channel Power MOSFET |
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