參數(shù)資料
型號(hào)： AH278Z4-BE1
廠商： BCD Semiconductor Manufacturing Limited
英文描述： HIGH VOLTAGE HALL EFFECT LATCH
中文描述： 高壓霍爾效應(yīng)鎖存
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 195K
代理商： AH278Z4-BE1
HIGH VOLTAGE HALL EFFECT LATCH
AH278
4
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
Data
Sheet
Parameter
Symbol
Value
Unit
Supply Voltage
V
CC
30
V
Reverse Protection Voltage
V
RCC
-30
V
Magnetic Flux Density
B
Unlimited
Gauss
Output Current
Continuous
I
O
500 (Note 2)
mA
Hold
600
mA
Peak (start up)
800
mA
Power Dissipation
P
D
550
mW
Thermal Resistance
Die to atmosphere
θ
JA
227
o
C/W
Die to package case
θ
JC
49
o
C/W
Storage Temperature
T
STG
-50 to 150
o
C
ESD (Machine Model)
300
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Note 2: Continuos output current is 300mA at 85
o
C.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
T
A
4
28
V
Operating Ambient Temperature
-20
85
o
C
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
(T
A
=25
o
C)
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