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參數(shù)資料
| 型號： | AH115-S8 |
| 元件分類： | 放大器 |
| 英文描述： | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SMT, MS-012, SOIC-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 638K |
| 代理商： | AH115-S8 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 4 of 7
October 2005
AH115 / ECP050G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
2140 MHz Application Circuit (AH115-S8PCB2140)
Typical RF Performance at 25
°C
Frequency
2140 MHz
S21 – Gain
14.4 dB
S11 – Input Return Loss
-23 dB
S22 – Output Return Loss
-8 dB
Output P1dB
+28.5 dBm
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+42 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+20 dBm
Noise Figure
5.3 dB
Device / Supply Voltage
+5 V
Quiescent Current
250 mA
S21 vs. Frequency
6
8
10
12
14
16
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
21
(
d
B
)
+25°C
+85°C
-40°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S1
1
(dB
)
+25°C
+85°C
-40°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S2
2
(dB
)
+25°C
+85°C
-40°C
0
1
2
3
4
5
6
7
8
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
NF
(
d
B)
+ 25°C
+85°C
-40°C
ACPR vs. Channel Power
3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-65
-60
-55
-50
-45
-40
-35
15
16
17
18
19
20
21
Output Channel Power (dBm)
AC
P
R
(
d
Bc
)
+25°C
+85°C
-40°C
P1 dB vs. Frequency
20
22
24
26
28
30
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
P1
d
B
(
d
B
m
)
+25°C
+85°C
-40°C
OIP3 vs. Frequency
+25°C, +11 dBm / tone
35
37
39
41
43
45
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
OI
P3
(
d
B
m
)
OIP3 vs. Temperature
freq. = 2140, 2141, +11 dBm / tone
35
37
39
41
43
45
-40
-15
10
35
60
85
Temperature ( °C)
OI
P
3
(
d
B
m
)
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
35
37
39
41
43
45
6
8
10
12
14
16
18
20
Output Power (dBm)
OI
P3
(
d
B
m
)
相關(guān)PDF資料 |
PDF描述 |
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| AH115 | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AH115 | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AH116-S8G | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AH116-S8G | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AH116-S8 | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AH115-S8G | 功能描述:射頻放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH115-S8-G | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC |
| AH115-S8PCB1960 | 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AH115-S8PCB2140 | 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AH115-S8TRG | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
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