
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
October 2003
The Communications Edge TM
AH114
Watt, High Linearity InGaP HBT Amplifier
Advanced Data Sheet
Product Features
400 – 2500 MHz
+23 dBm P1dB
+40 dBm Output IP3
19 dB Gain @ 900 MHz
14.5 dB Gain @ 1900 MHz
Single Positive Supply (+5V)
SOT-89 SMT Package
Product Description
The AH114 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +41 dBm OIP3 and +23 dBm of compressed 1dB
power. It is housed in an industry standard SOT-89 SMT
package. All devices are 100% RF and DC tested.
The AH114 is targeted for use as a driver amplifier in
wireless infrastructure or CATV applications where high
linearity and medium power is required. An internal
active bias allows the AH114 to maintain high linearity
over temperature and operate directly off a single +5 V
supply. This combination makes the device an excellent
candidate for transceiver line cards in current and next
generation multi-carrier 3G base stations.
Functional Diagram
1
3
2
4
Function
Pin No.
Input / Base
1
Output / Collector
3
Ground
2, 4
Target Specifications
Parameters
Units
Min
Typ
Max
Frequency Range
MHz
400
1900
2500
S21 - Gain
dB
13.5
14.5
S11 - Input R.L.
dB
-10
S22 - Output R.L.
dB
-15
Output P1dB
dBm
+23
Output IP3
dBm
+41
IS-95 Channel Power
@ -60 dBc ACPR
dBm
+15
Noise Figure
dB
5.0
Operating Current Range
mA
135
150
165
Device Voltage
V
+5
Test conditions unless otherwise noted.
1. T = 25C, Vsupply = +5 V, Frequency = 1900 MHz, in recommended application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance
Parameters
Units
Typical
Frequency
MHz
900
1900
2140
S21 - Gain
dB
19
14.5
14.0
S11 - Input R.L.
dB
-10
-15
S22 - Output R.L.
dB
-10
-15
Output P1dB
dBm
+24
+23
Output IP32
dBm
+40
+41
+40
Noise Figure
dB
5.0
6.0
Supply Bias
+5 V @ 150 mA
Typical parameters reflect performance in an application circuit:
Supply Voltage = +5 V, I = 150 mA, +25
° C
Thermal Information
Parameters
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Thermal Resistance
149
°C/W
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
Operating Case Temperature
-40 to +85
°C
AH114
Watt, High Linearity InGaP HBT Amplifier
Storage Temperature
-65 to +150
°C
AH114-PCB900
900 MHz Evaluation Board
RF Input Power (continuous)
+12 dBm
AH114-PCB1900
1900 MHz Evaluation Board
Device Voltage / Current
+6 V / 220mA
AH114-PCB2140
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.