參數(shù)資料
型號(hào)： AG303-63
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： SMT, MO-203, SOT-363, 6 PIN
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 516K
代理商： AG303-63
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 6
February 2005
AG303-63
InGaP HBT Gain Block
Product Information
The Communications Edge TM
Application Circuit
Recommended Component Values
Reference
Frequency (MHz)
Designator
50
500
900
1900
2200
2500
3500
L1
820 nH
220 nH
68 nH
27 nH
22 nH
18 nH
15 nH
C1, C2, C4
.018 F
1000 pF
100 pF
68 pF
56 pF
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
Value / Type
Size
L1
39 nH wirewound inductor
0603
C1, C2
56 pF chip capacitor
0603
C3
0.018
PF chip capacitor
0603
C4
Do Not Place
R1
22.1
: 1% tolerance
0805
Recommended Bias Resistor Values
Supply
Voltage
R1 value
Size
5 V
22.1 ohms
0603
6 V
51 ohms
0805
7 V
80 ohms
1206
8 V
108 ohms
1210
9 V
137 ohms
1210
10 V
166 ohms
1210
12 V
223 ohms
2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25¤ C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-22.98
179.98
21.98
177.39
-24.44
3.54
-20.65
-5.68
250
-22.69
159.13
21.87
167.91
-25.02
4.82
-20.97
-15.75
500
-20.16
143.45
21.63
156.07
-24.85
3.57
-25.40
-43.37
750
-20.26
125.22
21.26
144.84
-24.83
4.51
-25.00
-70.94
1000
-20.94
105.07
20.77
134.31
-24.96
3.28
-23.86
-91.79
1250
-20.59
89.33
20.29
124.27
-24.48
7.57
-22.22
-112.20
1500
-20.65
73.36
19.71
115.11
-24.24
5.92
-20.71
-125.75
1750
-20.44
58.55
19.14
106.54
-23.97
6.93
-19.65
-135.37
2000
-19.79
46.75
18.54
98.41
-23.30
9.91
-18.55
-142.40
2250
-16.65
30.04
17.95
91.26
-23.27
8.63
-16.11
-127.79
2500
-17.12
24.85
17.54
85.95
-23.55
5.06
-16.52
-139.55
2750
-17.94
23.45
17.04
78.85
-22.50
5.49
-16.78
-152.45
3000
-19.00
24.66
16.52
71.97
-22.27
7.44
-17.04
-171.24
3250
-20.08
31.09
16.06
65.74
-21.97
7.62
-16.83
169.31
3500
-21.05
44.35
15.56
59.22
-21.88
5.59
-16.19
149.95
3750
-20.77
62.21
15.09
52.71
-21.42
3.70
-14.57
132.43
4000
-19.88
76.48
14.56
46.28
-21.00
1.61
-12.93
122.50
4250
-18.40
88.30
14.12
40.49
-20.52
-0.58
-11.61
114.50
4500
-17.26
96.65
13.65
34.69
-20.29
-4.52
-10.81
107.97
4750
-16.54
101.15
13.23
28.72
-20.01
-4.49
-10.22
105.55
5000
-16.75
103.13
12.85
23.29
-20.11
-4.65
-9.92
105.40
5250
-17.21
108.11
12.49
18.36
-19.52
-7.40
-10.06
102.86
5500
-18.69
112.12
12.14
13.87
-19.18
-10.39
-10.32
103.16
5750
-20.02
123.21
11.90
8.93
-19.00
-12.21
-10.98
105.01
6000
-22.38
131.64
11.68
4.17
-18.60
-14.81
-11.52
103.93
Device S-parameters are available for download on the website at: http://www.wj.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 F
R1
Bias
Resistor
RF IN
C4
Bypass
Capacitor
C2
Blocking
Capacitor
Vcc
Icc = 35 mA
AG303-63
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參數(shù)描述
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