參數(shù)資料
型號(hào): IC42S32200L
英文描述: 512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 為512k字× 32位× 4銀行(64兆位)同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 20/62頁(yè)
文件大?。?/td> 900K
代理商: IC42S32200L
IC42S32200
IC42S32200L
20
Integrated Circuit Solution Inc.
DR036-0D 02/04/2005
Absolute Maximum Rating
Symbol
VIN,VOUT
VDD,VDDQ
TOPR
TSTG
TSOLDER
PD
IOUT
Item
Input,Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
Rating
Unit
V
V
C
C
C
W
mA
Note
1
1
1
1
1
1
1
-0.3~VDD +0.3
-0.3~4.6
0~70
-55~150
260
1
50
Recommended D.C.Operating Conditions (Ta =0~70 C)
Symbol
V
DD
VDDQ
VIH
VIL
Parameter
Power Supply Voltage
Power Supply Voltage(for I/O Buffer)
LVTTL Input High Voltage
LVTTL Input Low Voltage
Min.
3.0
3.0
2.0
-
1.2
Typ.
3.3
3.3
Max.
3.6
3.6
VDDQ +
1.2
0.8
Unit
V
V
V
V
Note
2
2
2
2
Capacitance (VDD =3.3V,f =1MHz,Ta =25 C)
Symbol
CI
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Min.
Max.
4.5
6.5
Unit
pF
pF
Note:
1. These parameters are periodically sampled and are not 100% tested.
2. V
IH
(max) for pulse width with
3ns of duration
V
IL
(min) for pulse width with
3ns of duration
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