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參數(shù)資料
| 型號(hào)： | AFM02N6-032 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 26K |
| 代理商： | AFM02N6-032 |
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 6/99A
Surface Mount GaAs MESFET Chip
AFM02N6-032
G
A
(d
B
)
Frequency (GHz)
RF Minimum Noise Figure (NFMIN) and
Associated Gain (GA) vs. Frequency (GHz)
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16 18
20
1
2
3
4
5
N
F
M
IN
(d
B
)
VDS = 2 V, IDS = 10 mA
GA (dB)
NFMIN (dB)
50
0
3.0
-0.2 V
-0.4 V
-0.6 V
-0.8 V
40
30
20
10
0
VDS (V)
l D
S
(m
A
)
VGS = 0 V
DC Drain Current (IDS) vs. Drain Voltage (VDS)
as a Function of Gate to Source Voltage (VGS)
0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
0
5
10
15
20
0
IDS (mA)
RF Minimum Noise Figure (NFMIN) and
Associated Gain (GA) vs. Drain Current (IDS)
N
F
M
IN
(d
B
)
G
A
(d
B
)
GA (dB)
NFMIN (dB)
100
0
-2.0
0
100
0
-1.0
50
1.0
50
g
m
(m
S
)
VGS (V)
l D
S
(m
A
)
VDS = 2 V
DC Drain Current (IDS) and
Transconductance (gm) vs.
Gate to Source Voltage (VGS)
Freq.
NFMIN
ΓΓopt
(GHz)
(dB)
Mag.
Ang.
RN/50
GA (dB)
1
0.50
0.85
6.0
0.65
20.00
2
0.55
0.82
12.4
0.62
16.51
4
0.65
0.72
38.1
0.51
13.50
6
0.80
0.55
57.2
0.40
11.36
8
1.10
0.42
86.9
0.25
9.50
10
1.60
0.29
127.3
0.17
8.00
12
2.12
0.12
156.2
0.20
6.74
14
2.77
0.28
-83.0
0.43
5.63
16
3.50
0.43
-59.5
1.07
4.50
18
4.33
0.56
-49.8
1.82
3.50
Typical Noise Parameters
(VDS = 2 V, IDS = 10 mA)
Typical Performance Data
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