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參數(shù)資料
| 型號： | AF8510CSA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 317K |
| 代理商： | AF8510CSA |
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
2/8
Absolute Maximum Ratings
Symbol
Parameter
N-Channel P-Channel
Units
VDS
Drain-Source Voltage
30
-30
VGS
Gate-Source Voltage
±20
V
TA=25C
6.9
-5.3
ID
Continuous Drain Current (Note 1)
TA=70C
5.5
-4.2
V
IDM
Pulsed Drain Current (Note 2)
30
-30
A
PD
Total Power Dissipation
TA=25C
2.0
W
Linear Deratomg Factor
0.016
W/ C
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
62.5
C/W
N-CH Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
30
-
V
BV
DSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.02
-
V/
oC
VGS=10V, ID=5A
-
28
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=4.5V, ID=3A
-
40
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.6
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=30V, VGS=0V
-
1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
10
16
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain (“Miller”) Charge
ID=6.9A,
VDS=24V,
VGS=4.5V
-
6
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
8
-
tr
Rise Time
-
7
-
td(off)
Turn-Off Delay Time
-
20
-
tf
Fall-Time
VDS=15V,
ID=1A,
RG=3.3, VGS=10V
RD=15
-
6
-
ns
Ciss
Input Capacitance
-
540
870
Coss
Output Capacitance
-
160
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
-
20
-
ns
Qrr
Reverse Recovery Charge
IS=6.9A, VGS=0V
dl/dt=100A/s
11
-
nC
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