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參數(shù)資料
| 型號(hào)： | AF40P03D |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 A, 30 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, TO-252, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 430K |
| 代理商： | AF40P03D |
AF40P03
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
TC=25C
-30
ID
Continuous Drain Current, VGS=10V
TC=100C
-18
A
IDM
Pulsed Drain Current (Note 1)
-120
A
Power Dissipation
TC=25C
31.3
W
PD
Linear Derating Factor
0.25
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
RθJC
Thermal Resistance Junction-Case
Max.
4.0
C/W
RθJA
Thermal Resistance Junction- Ambient
Max.
110
C/W
Electrical Characteristics (T
J=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-30
-
V
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=-1mA
-
-0.02
-
V/C
VGS=-10V, ID=-18A
-
28
RDS(ON)
Static Drain-Source
On-Resistance (Note 2)
VGS=-4.5V, ID=-14A
-
50
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=-250uA
-1
-
V
gfs
Forward Transconductance
VDS=-10V, ID=-18A
-
20
-
S
Drain-Source Leakage
Current(TJ=25C)
VDS=-30V, VGS=0V
-
-1
IDSS
Drain-Source Leakage
Current(TJ=150C)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 2)
-
14
22
Qgs
Gate-Source Charge
-
3
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-18A
VDS=-24V
VGS=-4.5V
-
9
-
nC
td(on)
Turn-On Delay Time (Note 2)
-
12
-
tr
Rise Time
-
56
-
td(off)
Turn-Off Delay Time
-
30
-
tf
Fall-Time
VDS=-15V
ID=-18A
RG=3.3, VGS=-10V
RD=0.8
-
57
-
nS
Ciss
Input Capacitance
-
915
1465
Coss
Output Capacitance
-
280
-
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=-25V,
f=1.0MHz
-
195
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 2)
IS=-18A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time (Note 2)
-
30
-
ns
Qrr
Reverse Recovery Charge
IS=-18A, VGS=0V,
Dl/dt=-100A/s
-
21
-
nC
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