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參數(shù)資料
| 型號： | AF2302NWLA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 443K |
| 代理商： | AF2302NWLA |
AF2302N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.3 Jul 12, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
TA=25C
3.2
ID
Continuous Drain Current, VGS=4.5V (Note 1)
TA=70C
2.6
A
IDM
Pulsed Drain Current (Note 2, 3)
10
A
Total Power Dissipation
TA=25C
1.38
W
PD
Linear Derating Factor
0.01
W/C
TSTG
Storage Temperature Range
-55 to +150
C
TJ
Operating Junction Temperature Range
-55 to +150
C
Thermal Data
Symbol
Parameter
Limit
Units
RθJA
Thermal Resistance Junction-Ambient (Note 1)
Max.
90
C/W
Electrical Characteristics (T
J=25
oC unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
BVDSS/
TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=1mA
-
0.1
-
V/C
VGS=4.5V, ID=3.6A
-
85
RDS(ON) Static Drain-Source On-Resistance
(Note 3)
VGS=2.5V, ID=3.1A
-
115
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250uA
0.5
-
1.2
V
gfs
Forward Transconductance
VDS=5V, ID=3.6A
-
6
-
S
TJ=25C
VDS=20V, VGS=0V
-
1
IDSS
Drain-Source Leakage
Current
TJ=70C
VDS=20V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
4.4
-
Qgs
Gate-Source Charge
-
0.6
-
Qgd
Gate-Drain (“Miller”) Charge
VDS=10V, ID=3.6A,
VGS=4.5V
-
1.9
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
5.2
-
tr
Turn-On Rise Time
-
37
-
td(off)
Turn-Off Delay Time
-
15
-
tf
Turn-Off Fall-Time
VDS=10V, RD=2.8,
ID=3.6A, VGS=5V,
RG=6
-
5.7
-
nS
Ciss
Input Capacitance
-
145
-
Coss
Output Capacitance
-
100
-
Crss
Reverse Transfer Capacitance
VDS=10V, VGS=0V,
f=1.0MHz
-
50
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current (Body
Diode)
VD=VG=0V, VS=1.2V
-
1
A
ISM
Pulsed Source Current (Body Diode)
(Note 2)
-
10
A
VSD
Forward On Voltage (Note 3)
IS=1.6A, VGS=0V
-
1.2
V
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 270oC/W when mounted on min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width
≤ 300us, duty cycle ≤ 2%.
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