- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374039 > ADUC831 (Analog Devices, Inc.) LJT 6C 6#22D PIN RECP PDF資料下載
參數(shù)資料
| 型號(hào)： | ADUC831 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | LJT 6C 6#22D PIN RECP |
| 中文描述： | MicroConverter的，12位ADC和62 kBytes為嵌入式閃存MCU數(shù)模轉(zhuǎn)換器 |
| 文件頁數(shù)： | 27/76頁 |
| 文件大?。?/td> | 1211K |
| 代理商： | ADUC831 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁
REV. 0
ADuC831
–27–
NONVOLATILE FLASH/EE MEMORY
Flash/EE Memory Overview
The ADuC831 incorporates Flash/EE memory technology on-chip
to provide the user with nonvolatile, in-circuit reprogrammable
code, and data memory space. Flash/EE memory is a relatively
recent type of nonvolatile memory technology and is based on a
single transistor cell architecture.
This technology is basically an outgrowth of EPROM technology
and was developed through the late 1980s. Flash/EE memory
takes the flexible in-circuit reprogrammable features of EEPROM
and combines them with the space efficient/density features of
EPROM (see Figure 17).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array, like EPROM, can be imple-
mented to achieve the space efficiencies or memory densities
required by a given design. Like EEPROM, Flash memory can
be programmed in-system at a byte level, although it must first be
erased; the erase being performed in page blocks. Thus, Flash
memory is often and more correctly referred to as Flash/EE memory.
FLASH/EE MEMORY
TECHNOLOGY
SPACE EFFICIENT/
DENSITY
IN-CIRCUIT
REPROGRAMMABLE
EPROM
TECHNOLOGY
EEPROM
TECHNOLOGY
Figure 17. Flash/EE Memory Development
Overall, Flash/EE memory represents a step closer to the ideal
memory device that includes nonvolatility, in-circuit programma-
bility, high density and low cost. Incorporated in the ADuC831,
Flash/EE memory technology allows the user to update program
code space in-circuit, without the need to replace onetime
programmable (OTP) devices at remote operating nodes.
Flash/EE Memory and the ADuC831
The ADuC831 provides two arrays of Flash/EE memory for user
applications. 62 kBytes of Flash/EE program space are provided
on-chip to facilitate code execution without any external dis-
crete ROM device requirements. The program memory can be
programmed in-circuit using the serial download mode provided,
using conventional third party memory programmers, or via a
user defined protocol that can configure it as data if required.
A 4 kByte Flash/EE data memory space is also provided on-chip.
This may be used as a general-purpose nonvolatile scratchpad
area. User access to this area is via a group of six SFRs. This
space can be programmed at a byte level, although it must first
be erased in 4-byte pages.
ADuC831 Flash/EE Memory Reliability
The Flash/EE program and data memory arrays on the ADuC831
are fully qualified for two key Flash/EE memory characteristics,
namely Flash/EE Memory Cycling Endurance and Flash/EE
Memory Data Retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four indepen-
dent, sequential events. These events are defined as:
a. Initial page erase sequence
b. Read/verify sequence
c. Byte program sequence
d. Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded, signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the specification pages of this data sheet, the
ADuC831 Flash/EE Memory Endurance qualification has been
carried out in accordance with JEDEC Specification A117 over
the industrial temperature range of –40
°
C to +25
°
C and +85
°
C
to +125
°
C. The results allow the specification of a minimum
endurance figure over supply and temperature of 100,000
cycles, with an endurance figure of 700,000 cycles being typical
of operation at 25
°
C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the ADuC831 has
been qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(T
J
= 55
°
C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described above
before data retention is characterized. This means that the
Flash/EE memory is guaranteed to retain its data for its full
specified retention lifetime every time the Flash/EE memory is
reprogrammed. It should also be noted that retention lifetime,
based on an activation energy of 0.6 eV, will derate with T
J
as
shown in Figure 18.
A single Flash/EE
Memory
Endurance Cycle
40
60
70
90
T
J
JUNCTION TEMPERATURE – C
R
250
200
150
100
50
0
50
80
110
300
100
ADI SPECIFICATION
100 YEARS MIN.
AT T
J
= 55 C
Figure 18. Flash/EE Memory Data Retention
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADUC831BCP | Circular Connector; No. of Contacts:6; Series:LJT07R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:9; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:9-35 |
| ADUC831BS | MicroConverter, 12-Bit ADCs and DACs with Embedded 62 kBytes Flash MCU |
| ADUC836 | MicroConverter, Dual 16-Bit-ADCs with Embedded 62 kB Flash MCU |
| ADUC836BCP | MicroConverter, Dual 16-Bit-ADCs with Embedded 62 kB Flash MCU |
| ADUC836BS | MicroConverter, Dual 16-Bit-ADCs with Embedded 62 kB Flash MCU |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADUC831BCP | 制造商:Rochester Electronics LLC 功能描述: 制造商:Analog Devices 功能描述: |
| ADUC831BCP-REEL | 制造商:Analog Devices 功能描述:MCU 8-bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 56-Pin LFCSP EP T/R 制造商:Analog Devices 功能描述:12-BIT ADC WITH EMBEDDED 8-BIT MCU I.C. - Tape and Reel |
| ADUC831BCPZ | 功能描述:IC MCU 62K FLASH ADC/DAC 56LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC831BCPZ-REEL | 功能描述:IC MCU 62K FLASH ADC/DAC 56LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC831BS | 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 52-Pin MQFP 制造商:Analog Devices 功能描述:8BIT MCU +12BIT ADC LQFP52 831 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。