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| 型號(hào)： | ADUC814ARU-REEL |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | MicroConverter, Small Package 12-Bit ADC with Embedded Flash MCU |
| 中文描述： | 8-BIT, FLASH, 16.78 MHz, MICROCONTROLLER, PDSO28 |
| 封裝： | 4.40 X 9.70 MM, MO-153AE, TSSOP-28 |
| 文件頁數(shù)： | 30/72頁 |
| 文件大?。?/td> | 846K |
| 代理商： | ADUC814ARU-REEL |
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ADuC814
NONVOLITILE FLASH/EE MEMORY
FLASH/EE MEMORY OVERVIEW
The ADuC814 incorporates Flash/EE memory technology on-
chip to provide the user with nonvolatile, in-circuit reprogram-
mable code and data memory space.
Rev. A | Page 30 of 72
Flash/EE memory takes the flexible in-circuit reprogrammable
features of EEPROM and combines them with the space efficient/
density features of EPROM (see Figure 32).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array such as EPROM can be
implemented to achieve the space efficiencies or memory
densities required by a given design.
Like EEPROM, flash memory can be programmed in-system at
a byte level, although it must first be erased; the erase being
performed in page blocks. Thus, flash memory is often and
more correctly referred to as Flash/EE memory.
EEPROM
TECHNOLOGY
EPROM
TECHNOLOGY
FLASH/EE MEMORY
TECHNOLOGY
IN-CIRCUIT
REPROGRAMMABLE
SPACE EFFICIENT/
DENSITY
0
Figure 32. Flash/EE Memory Development
Incorporated in the ADuC814, Flash/EE memory technology
allows the user to update program code space in-circuit without
the need to replace one-time programmable (OTP) devices at
remote operating nodes.
FLASH/EE MEMORY AND THE ADUC814
The ADuC814 provides two arrays of Flash/EE memory for
user applications. There are 8 kbytes of Flash/EE program space
provided on-chip to facilitate code execution, therefore removing
the requirement for an external discrete ROM device. The pro-
gram memory can be programmed using conventional third-
party memory programmers. This array can also be programmed
in-circuit, using the serial download mode provided.
A 640-byte Flash/EE data memory space is also provided on-
chip. This may be used as a general-purpose nonvolatile
scratchpad area. User access to this area is via a group of six
SFRs. This space can be programmed at a byte level, although it
must first be erased in 4-byte pages.
ADUC814 FLASH/EE MEMORY RELIABILITY
The Flash/EE program and data memory arrays on the
ADuC814 are fully qualified for two key Flash/EE memory
characteristics: Flash/EE memory cycling endurance and
Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four
independent, sequential events:
1.
2.
3.
4.
Initial page erase sequence
Read/verify sequence
Byte program sequence
Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specifications tables, the ADuC814 Flash/EE
memory endurance qualification has been carried out in accor-
dance with JEDEC Specification A117 over the industrial
temperature range of –40°C to +125°C. The results allow the
specification of a minimum endurance figure over supply and a
temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25°C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the ADuC814 has
been qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(T
J
= 55°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described
above, before data retention is characterized. This means that
the Flash/EE memory is guaranteed to retain its data for its full
specified retention lifetime every time the Flash/EE memory is
reprogrammed. It should be noted that retention lifetime, based
on an activation energy of 0.6 eV, derates with T
J
as shown in
Figure 33.
40
60
70
90
T
J
JUNCTION TEMPERATURE (
°
C)
R
250
200
150
100
50
0
50
80
110
300
100
ADI SPECIFICATION
100 YEARS MIN.
AT T
J
= 55
°
C
0
Figure 33. Flash/EE Memory Data Retention
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| ADUC814ARU-REEL7 | 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 8KB Flash 3V/5V 28-Pin TSSOP T/R 制造商:Analog Devices 功能描述:12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C - Tape and Reel 制造商:Rochester Electronics LLC 功能描述:12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C - Tape and Reel |
| ADUC814ARUZ | 功能描述:IC ADC 12BIT W/FLASH MCU 28TSSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 產(chǎn)品培訓(xùn)模塊:MCU Product Line Introduction XMEGA Introduction AVR XMEGA USB Connectivity 標(biāo)準(zhǔn)包裝:90 系列:AVR® XMEGA 核心處理器:AVR 芯體尺寸:8/16-位 速度:32MHz 連通性:I²C，IrDA，SPI，UART/USART 外圍設(shè)備:欠壓檢測/復(fù)位，DMA，POR，PWM，WDT 輸入/輸出數(shù):50 程序存儲(chǔ)器容量:192KB（96K x 16） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:4K x 8 RAM 容量:16K x 8 電壓 - 電源 (Vcc/Vdd):1.6 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 16x12b; D/A 2x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:64-TQFP 包裝:托盤 配用:ATSTK600-RC14-ND - STK600 SOCKET/ADAPTER 64TQFPATSTK600-TQFP64-ND - STK600 SOCKET/ADAPTER 64-TQFPATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMRATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM |
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