參數(shù)資料
型號: ADS8412IBPFBTG4
廠商: TEXAS INSTRUMENTS INC
元件分類: ADC
英文描述: 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PQFP48
封裝: GREEN, PLASTIC, TQFP-48
文件頁數(shù): 12/29頁
文件大?。?/td> 1018K
代理商: ADS8412IBPFBTG4
www.ti.com
ABSOLUTE MAXIMUM RATINGS
ADS8412
SLAS384A – JUNE 2003 – REVISED DECEMBER 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
MAXIMUM
NO MISSING
TRANSPORT
INTEGRAL
DIFFERENTIAL
CODES
PACKAGE
TEMPERATURE
ORDERING
MODEL
MEDIA
LINEARITY
RESOLUTION
TYPE
DESIGNATOR
RANGE
INFORMATION
QUANTITY
(LSB)
(BIT)
Tape and
ADS8412IPFBT
reel 250
48 Pin
ADS8412I
–6 ~ 6
–2~+3
15
PFB
–40
°C to 85°C
TQFP
Tape and
ADS8412IPFBR
reel 1000
Tape and
ADS8412IBPFBT
reel 250
48 Pin
ADS8412IB
–2.5 ~ 2.5
–1~+2
16
PFB
–40
°C to 85°C
TQFP
Tape and
ADS8412IBPFBR
reel 1000
(1)
For the most current specifications and package information, refer to our website at www.ti.com.
over operating free-air temperature range unless otherwise noted(1)
UNIT
+IN to AGND
–0.4 V to +VA + 0.1 V
Voltage
–IN to AGND
–0.4 V to +VA + 0.1 V
+VA to AGND
–0.3 V to 7 V
Voltage range
+VBD to BDGND
–0.3 V to 7 V
+VA to +VBD
–0.3 V to 2.55 V
Digital input voltage to BDGND
–0.3 V to +VBD + 0.3 V
Digital output voltage to BDGND
–0.3 V to +VBD + 0.3 V
Operating free-air temperature range, TA
–40
°C to 85°C
Storage temperature range, Tstg
–65
°C to 150°C
Junction temperature (TJ max)
150
°C
Power dissipation
(TJMax - TA)/θJA
TQFP package
θ
JA thermal impedance
86
°C/W
Vapor phase (60 sec)
215
°C
Lead temperature, soldering
Infrared (15 sec)
220
°C
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2
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