°C to +85°
參數(shù)資料
型號: ADS1241EVM
廠商: Texas Instruments
文件頁數(shù): 12/30頁
文件大?。?/td> 0K
描述: EVAL MODULE FOR ADS1241
標(biāo)準(zhǔn)包裝: 1
ADC 的數(shù)量: 1
位數(shù): 24
采樣率(每秒): 15
數(shù)據(jù)接口: SPI?
輸入范圍: 0 ~ 2.5 V
在以下條件下的電源(標(biāo)準(zhǔn)): 0.6mW @ 3V
工作溫度: -40°C ~ 85°C
已用 IC / 零件: ADS1241M
已供物品:
相關(guān)產(chǎn)品: ADS1241EG4-ND - IC ADC 24-BIT SER PROGBL 28-SSOP
ADS1241E/1KG4-ND - IC ADC 24-BIT SER PROGBL 28-SSOP
296-25895-2-ND - IC ADC 24-BIT SER PROGBL 28-SSOP
ADS1241E-ND - IC ADC 24-BIT SER PROGBL 28-SSOP
其它名稱: 296-13537
ADS1240, 1241
2
SBAS173F
www.ti.com
DIGITAL CHARACTERISTICS: –40
°C to +85°C, DV
DD 2.7V to 5.25V
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Digital Input/Output
Logic Family
CMOS
Logic Level: VIH
0.8 DVDD
DVDD
V
VIL
DGND
0.2 DVDD
V
VOH
IOH = 1mA
DVDD – 0.4
V
VOL
IOL = 1mA
DGND
DGND + 0.4
V
Input Leakage: IIH
VI = DVDD
10
A
IIL
VI = 0
–10
A
Master Clock Rate: fOSC
15
MHz
Master Clock Period: tOSC
1/fOSC
200
1000
ns
AVDD to DGND ...................................................................... –0.3V to +6V
DVDD to DGND ...................................................................... –0.3V to +6V
Input Current ............................................................... 100mA, Momentary
DGND to AGND .................................................................... –0.3V to 0.3V
Input Current ................................................................. 10mA, Continuous
AIN ................................................................. AGND –0.5V to AVDD + 0.5V
Digital Input Voltage to DGND ................................. –0.3V to DVDD + 0.3V
Digital Output Voltage to DGND .............................. –0.3V to DVDD + 0.3V
Maximum Junction Temperature ................................................... +150
°C
Operating Temperature Range ......................................... –40
°C to +85°C
Storage Temperature Range .......................................... –60
°C to +150°C
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability.
ABSOLUTE MAXIMUM RATINGS(1)
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
For the most current package and ordering information, see
the Package Option Addendum at the end of this document,
or see the TI website at www.ti.com.
PACKAGE/ORDERING INFORMATION
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