
PRELIMINARY TECHNICAL DATA
REV. PrD
–6–
ADR520/525/530/540/545/550
THEORY OF OPERATION
The ADR520-ADR550 use the “bandgap” concept to produce
a stable low-temperature coefficient voltage reference suitable
for high accuracy data acquisition components and systems.
The device makes use of the underlying physical nature of a
silicon transistor base-emitter voltage in the forward-biased
operating region. All such transistors have an approximatly
–2 mV/
∞C temperature coefficient making them unsuitable for
use directly as a low TC reference, however, extrapolation of
the temperature characteristic of any one of these devices to
absolute zero (with collector current proportional to absolute
temperature) reveals that its VBE will go to approximately the
silicon bandgap voltage. Thus, if a voltage could be developed
with an opposing temperature coefficient to sum the VBE, a zero
TC reference would result. The ADR520-ADR550 circuit in
Figure 1, provides such a compensating voltage, V1 by driving
two transistors at different current densities and amplifying the
resultant VBE difference (
DVBE, which has a positive TC). The
sum of VBE and V1 provides a stable voltage reference over
temperature.
V+
V–
VBE
+
–
VBE
+
–
V1
+
–
Figure 1. Circuit Schematic
PARAMETER DEFINITIONS
Temperature Coefficient
Temperature coefficient is the change of output voltage with
respect to operating temperature changes, normalized by the
output voltage at 25
∞C. This parameter is expressed in ppm/∞C,
and can be determined with the following equation:
TCV
ppm
C
VT
VC
T
O
OO
O
∞
˙
=
()- ()
∞
()-
()
21
6
25
10
(1)
Where:
VO(25
∞C) = VO at 25∞C
VO(T1) = VO at temperature 1
VO(T2) = VO at temperature 2
Thermal Hysteresis
Thermal h ysteresis is defined as the change of output voltage after
the device is cycled through temperature from +25
∞C to –40∞C
to +85
∞C and back to +25∞C. This is a typical value from a sample
of parts put through such a cycle.
VV
C
V
ppm
VC
V
VC
O
HYS
O
TC
O
HYS
OO
TC
O
__
_
=
∞
()-
[] =
∞
()-
∞
()
25
10
6
(2)
Where:
VO(25
∞C) = VO at 25∞C
VO_TC = VO at 25
∞C after temperature cycle at +25∞C to –40∞C
to +85
∞C and back to +25∞C.
APPLICATION
The ADR20-ADR550 are a series of a precision shunt voltage
references. It is designed for operation without the need for an
external capacitor between the “+” and “-” terminals. If a by-
pass capacitor is used for filtering of the supply, the ADR5xx
will remain stable.
As with all shunt voltage references, an external bias resistor
(RBIAS) is required between the supply voltage and the
ADR520-550 (see Figure 2). RBIAS sets the current that flows
thru the load (IL) and the ADR520-ADR550 (IQ). Since the load
and the supply voltage can vary, RBIAS needs chosen based on:
1. RBIAS must to be small enough to supply the minimum IQ
current to the ADR520-ADR550 even when the supply voltage
is at its minimum and the load current is at its maximum value.
2. RBIAS also needs to be large enough so that IQ does not exceed
10 mA when the supply voltage is at its maximum and the
load current is at its minimum.
Given these conditions, RBIAS is determined by the supply volt-
age (VCC), the load and operating current (IL and IQ) of the
ADR520-ADR550 and the ADR520-ADR550’s output voltage,
(VOUT).
R
VV
II
BIAS
CC
OUT
LQ
=
-
(3)
ADR550
VOUT
VS
RBIAS
IQ
IQ + IL
IL
Figure 2. Shunt Reference
Precision Negative Voltage Reference
The ADR520-ADR550 is suitable for use in applications where
a precise negative voltage is desired. Figure 3 shows the
ADR520-ADR550 configured to provide a negative output.
ADR525
–2.5V
VCC
RBIAS
Figure 3. Negative Precision Reference Configuration
Output Voltage Trim
The ADR520-ADR550 TRIM terminal can be used to adjust-
able the output voltage over the range of +0.5%. This allows
systems designers to trim system errors by setting the reference
to a voltage other than pre-set output voltage. An external me-
chanical or electrical potentiometer can simply be used for this