參數(shù)資料
型號(hào): ADR435
廠商: Analog Devices, Inc.
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Ultralow Noise XFET Voltage References with Current Sink and Source Capability
中文描述: 超低噪聲XFET電壓基準(zhǔn)與電流吸入和源能力
文件頁數(shù): 1/24頁
文件大?。?/td> 868K
代理商: ADR435
Ultralow Noise XFET
Voltage References
with Current Sink and Source Capability
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
FEATURES
Low noise (0.1 Hz to 10 Hz): 3.5 μV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/°C max
B Grade: 3 ppm/°C max
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V
High output current: +30 mA/
20 mA
Wide temperature range:
40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Tel: 781.329.4700
www.analog.com
PIN CONFIGURATIONS
NC = NO CONNECT
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN
NC
2
3
GND
4
TP
NC
V
OUT
TRIM
8
7
6
5
0
Figure 1. 8-Lead MSOP
(RM Suffix)
NC = NO CONNECT
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN
NC
2
3
GND
4
TP
NC
V
OUT
TRIM
8
7
6
5
0
Figure 2. 8-Lead SOIC
(R Suffix)
The ADR43x series is a family of XFET voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using ADI’s patented temperature drift curvature
correction and XFET (eXtra implanted junction FET) technology,
the ADR43x’s voltage change versus temperature nonlinearity is
minimized.
The XFET references operate at lower current (800 μA) and
supply headroom (2 V) than buried-Zener references. Buried-
Zener references require more than 5 V headroom for operations.
The ADR43x XFET references are the only low noise solutions
for 5 V systems.
The ADR43x series has the capability to source up to 30 mA
and sink up to 20 mA of output current. It also comes with a
TRIM terminal to adjust the output voltage over a 0.5% range
without compromising performance. The ADR43x is available
in the 8-lead mini SOIC and 8-lead SOIC packages.
All versions are specified over the extended industrial tempera-
ture range (40°C to +125°C).
Table 1. Selection Guide
Accuracy
(mV)
ADR430B
2.048
±1
ADR430A
2.048
±3
ADR431B
2.500
±1
ADR431A
2.500
±3
ADR433B
3.000
±1.4
ADR433A
3.000
±4
ADR434B
4.096
±1.5
ADR434A
4.096
±5
ADR435B
5.000
±2
ADR435A
5.000
±6
ADR439B
4.500
±2
ADR439A
4.500
±5.4
Model
V
OUT
(V)
Temperature Coefficient
(ppm/°C)
3
10
3
10
3
10
3
10
3
10
3
10
相關(guān)PDF資料
PDF描述
ADR435A Ultralow Noise XFET Voltage References with Current Sink and Source Capability
ADR435AR Ultralow Noise XFET Voltage References with Current Sink and Source Capability
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ADR435ARM Ultralow Noise XFET Voltage References with Current Sink and Source Capability
ADR435ARM-REEL7 Ultralow Noise XFET Voltage References with Current Sink and Source Capability
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