參數(shù)資料
型號： ADR423
廠商： Analog Devices, Inc.
英文描述： Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References
中文描述： 超精密低噪聲，2.048 V/2.500第V / 3.00 V/5.00 V XFET電壓基準(zhǔn)
文件頁數(shù)： 2/16頁
文件大小： 223K
代理商： ADR423
REV. B
–2–
ADR42x–SPECIFICATIONS
ADR420 ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
Initial Accuracy
A Grade
V
O
V
OERR
2.045
–3
–0.15
2.047
–1
–0.05
2.048
2.051
+3
+0.15
2.049
+1
+0.05
10
3
V
mV
%
V
mV
%
ppm/
°
C
ppm/
°
C
V
ppm/V
Output Voltage
Initial Accuracy
B Grade
V
O
V
OERR
2.048
Temperature Coefficient A Grade
TCV
O
–40
°
C < T
A
< +125
°
C
2
1
B Grade
Supply Voltage Headroom
Line Regulation
V
IN
– V
O
V
O
/
V
IN
2
V
IN
= 5 V to 18 V
–40
°
C < T
A
< +125
°
C
I
LOAD
= 0 mA to 10 mA
–40
°
C < T
A
< +125
°
C
No Load
–40
°
C < T
A
< +125
°
C
0.1 Hz to 10 Hz
1 kHz
10
35
Load Regulation
V
O
/
I
LOAD
70
ppm/mA
Quiescent Current
I
IN
390
500
600
μ
A
μ
A
μ
V p-p
nV/
√
Hz
μ
s
ppm
ppm
dB
mA
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
e
N
p-p
e
N
t
R
V
O
V
O_HYS
RRR
I
SC
1.75
60
10
50
40
75
27
1,000 Hours
f
IN
= 10 kHz
Specifications subject to change without notice.
(@ V
IN
= 5.0 V to 15.0 V, T
A
= 25 C, unless otherwise noted.)
ADR421 ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
Initial Accuracy
A Grade
V
O
V
OERR
2.497
–3
–0.12
2.499
–1
–0.04
2.500
2.503
+3
+0.12
2.501
+1
+0.04
10
3
V
mV
%
V
mV
%
ppm/
°
C
ppm/
°
C
V
ppm/V
Output Voltage
Initial Accuracy
B Grade
V
O
V
OERR
2.500
Temperature Coefficient A Grade
TCV
O
–40
°
C < T
A
< +125
°
C
2
1
B Grade
Supply Voltage Headroom
Line Regulation
V
IN
– V
O
V
O
/
V
IN
2
V
IN
= 5 V to 18 V
–40
°
C < T
A
< +125
°
C
I
LOAD
= 0 mA to 10 mA
–40
C < T
A
< +125
°
C
No Load
–40
°
C < T
A
< +125
°
C
0.1 Hz to 10 Hz
1 kHz
10
35
Load Regulation
V
O
/
I
LOAD
70
ppm/mA
Quiescent Current
I
IN
390
500
600
μ
A
μ
A
μ
V p-p
nV/
√
Hz
μ
s
ppm
ppm
dB
mA
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
e
N
p-p
e
N
t
R
V
O
V
O_HYS
RRR
I
SC
1.75
80
10
50
40
75
27
1,000 Hours
f
IN
= 10 kHz
Specifications subject to change without notice.
(@ V
IN
= 5.0 V to 15.0 V, T
A
= 25 C, unless otherwise noted.)
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