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參數(shù)資料
| 型號(hào)： | ADP3412 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85 |
| 中文描述： | 與自舉雙MOSFET驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 135K |
| 代理商： | ADP3412 |
ADP3412
–4–
REV. 0
IN
DRVL
DRVH-SW
SW
tpdl
DRVL
tf
DRVL
tr
DRVH
tpdh
DRVH
tpdl
DRVH
tf
DRVH
tr
DRVL
V
TH
V
TH
1V
tpdh
DRVL
Figure 2. Nonoverlap Timing Diagram
(Timing Is Referenced to the 90% and 10% Points Unless Otherwise Noted)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADP3412JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3414 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3414JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3412JR | 功能描述:IC MOSFET DVR DUAL N-CH 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ADP3412JR-REEL | 制造商:Rochester Electronics LLC 功能描述:HIGH CURRENT DUAL MOSFET DRIVER - Tape and Reel |
| ADP3412JR-REEL7 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| ADP3412JRZ-REEL | 制造商:Analog Devices 功能描述: |
| ADP3413 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Dual Bootstrapped MOSFET Driver with Output Disable |
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