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參數資料
| 型號： | ADP3410 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Dual MOSFET Driver with Bootstrapping |
| 中文描述： | 與自舉雙MOSFET驅動器 |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 148K |
| 代理商： | ADP3410 |
REV. 0
–3–
ADP3410
Parameter
Symbol
Conditions
Min
Typ Max
Unit
LOW-SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
DRVL Transition Times
2
(See Figure 6)
DRVL Propagation Delay
2, 3
(See Figure 6)
V
CC
= 4.6 V
V
CC
= 4.6 V
V
CC
= 4.6 V, C
LOAD
= 3 nF
2.5
2.5
20
5
5
35
ns
tr
DRVL,
tf
DRVL
tpdh
DRVL
tpdl
DRVL
V
CC
= 4.6 V
5
30
25
ns
ns
NOTES
1
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
2
AC specifications are guaranteed by characterization, but not production tested.
3
For propagation delays,
tpdh
refers to the specified signal going high,
tpdl
refers to it going low.
4
Propagation delay measured until DRVL begins its transition.
5
Logic inputs meet typical CMOS I/O conditions for source/sink current (~1 mA).
6
Maximum propagation delay = 40 ns max + (1 ns/pF
×
C
DLY
).
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
VCC to PGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
BST to PGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +30 V
BST to SW . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
SW to PGND . . . . . . . . . . . . . . . . . . . . . . . . –2.0 V to +25 V
OVPSET to PGND . . . . . . . . . . . . . . . . . . . . –0.3 V to +10 V
SD
, IN,
DRVLSD
to GND . . . . . . . . . . . . . . –0.3 V to +7.3 V
GND to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
0.3 V
Operating Ambient Temperature Range . . . . . . . 0
°
C to 85
°
C
Operating Junction Temperature Range . . . . . . 0
°
C to 125
°
C
θ
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
°
C/W
θ
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
°
C/W
Storage Temperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300
°
C
*This is a stress rating only; operation beyond these limits can cause the device to
be permanently damaged.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADP3410 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Model
Temperature
Range
0
°
C to 85
°
C
Package
Description
Package
Option
ADP3410KRU
Thin Shrink Small RU-14
Outline Package
(TSSOP-14)
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PDF描述 |
|---|---|
| ADP3412 | Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85 |
| ADP3412JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3414 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ADP34100002RUR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ADP34100003RUR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ADP3410KRU | 制造商:Analog Devices 功能描述:Single MOSFET DRIVER, 14 Pin, Plastic, TSSOP |
| ADP3410KRU-REEL | 功能描述:IC MOSFET DVR DUAL N-CH 14TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ADP3410KRU-REEL7 | 功能描述:IC MOSFET DVR DUAL N-CH 14TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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