參數(shù)資料
型號: ADM4856AR
廠商: ANALOG DEVICES INC
元件分類: 通用總線功能
英文描述: TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,470MA I(D),TO-226AA RoHS Compliant: Yes
中文描述: LINE TRANSCEIVER, PDSO8
封裝: MS-012AA, SOIC-8
文件頁數(shù): 6/16頁
文件大?。?/td> 438K
代理商: ADM4856AR
ADM4850–ADM4857
ABSOLUTE MAXIMUM RATINGS
Table 7.
Parameter
V
CC
to GND
Digital I/O Voltage (DE, RE, DI, ROUT)
Driver Output/Receiver Input Voltage
Operating Temperature Range
Storage Temperature Range
θ
JA
Thermal Impedance
SOIC
LFCSP
Lead Temperature
Soldering (10 s)
Vapour Phase (60 s)
Infrared (15 s)
Rev. 0 | Page 6 of 16
Rating
6 V
0.3 V to V
CC
+ 0.3 V
9 V to +14 V
40°C to +85°C
65°C to +125°C
110°C/W
62°C/W
300°C
215°C
220°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
相關PDF資料
PDF描述
ADM4857 MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.115A; On-Resistance, Rds(on):7.5ohm; Rds(on) Test Voltage, Vgs:10V; Drain-Source Breakdown Voltage:60V; Gate-Source Voltage:2.5V; Leaded Process Compatible:No RoHS Compliant: No
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