VDD = 4.2 V to 5.5 V, GND = 0 V, unless oth" />
    參數(shù)資料
    型號: ADG858BCPZ-REEL
    廠商: Analog Devices Inc
    文件頁數(shù): 10/16頁
    文件大小: 0K
    描述: IC SWITCH QUAD SPDT 16LFCSP
    產(chǎn)品培訓(xùn)模塊: Switch Fundamentals
    標(biāo)準(zhǔn)包裝: 10,000
    功能: 開關(guān)
    電路: 4 x SPDT - NC/NO
    導(dǎo)通狀態(tài)電阻: 720 毫歐
    電壓電源: 單電源
    電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
    電流 - 電源: 3nA
    工作溫度: -40°C ~ 85°C
    安裝類型: 表面貼裝
    封裝/外殼: 16-UFQFN,CSP
    供應(yīng)商設(shè)備封裝: 16-LFCSP-UQ
    包裝: 帶卷 (TR)
    ADG858
    Rev. A | Page 3 of 16
    SPECIFICATIONS
    VDD = 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
    Table 1.
    Parameter
    +25°C
    40°C to +85°C
    Unit
    Test Conditions/Comments
    ANALOG SWITCH
    Analog Signal Range
    0 to VDD
    V
    On Resistance, RON
    0.58
    Ω typ
    VDD = 4.2 V, VS = 0 V to VDD, IS = 100 mA, see Figure 16
    0.72
    0.82
    Ω max
    On-Resistance Match Between Channels, ΔRON
    0.04
    Ω typ
    VDD = 4.2 V, VS = 2 V, IS = 100 mA
    0.14
    Ω max
    On-Resistance Flatness, RFLAT (ON)
    0.12
    Ω typ
    VDD = 4.2 V, VS = 0 V to VDD
    0.26
    Ω max
    IS = 100 mA
    LEAKAGE CURRENTS
    VDD = 5.5 V
    Source Off Leakage, IS (Off )
    ±10
    pA typ
    VS = 0.6 V/4.2 V, VD = 4.2 V/0.6 V, see Figure 17
    Channel On Leakage, ID, IS (On)
    ±10
    pA typ
    VS = VD = 0.6 V or 4.2 V, see Figure 18
    DIGITAL INPUTS
    Input High Voltage, VINH
    2.0
    V min
    Input Low Voltage, VINL
    0.8
    V max
    Input Current
    IINL or IINH
    0.004
    μA typ
    VIN = VGND or VDD
    0.05
    μA max
    Digital Input Capacitance, CIN
    2
    pF typ
    DYNAMIC CHARACTERISTICS1
    tON
    20
    ns typ
    RL = 50 Ω, CL = 35 pF
    27
    36
    ns max
    VS = 3 V/0 V, see Figure 19
    tOFF
    8
    ns typ
    RL = 50 Ω, CL = 35 pF
    12
    13
    ns max
    VS = 3 V, see Figure 19
    Break-Before-Make Time Delay, tBBM
    14
    ns typ
    RL = 50 Ω, CL = 35 pF
    9
    ns min
    VS1 = VS2 = 1.5 V, see Figure 20
    Charge Injection
    45
    pC typ
    VS = 1.5 V, RS = 0 Ω, CL = 1 nF, see Figure 21
    Off Isolation
    67
    dB typ
    RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 22
    Channel-to-Channel Crosstalk
    85
    dB typ
    S1A to S2A/S1B to S2B/S3A to S4A/S3B to S4B,
    RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 25
    67
    dB typ
    S1A to S1B/S2A to S2B/S3A to S3B/S4A to S4B,
    RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 24
    Total Harmonic Distortion, THD + N
    0.06
    %
    RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
    Insertion Loss
    0.05
    dB typ
    RL = 50 Ω, CL = 5 pF, see Figure 23
    3 dB Bandwidth
    70
    MHz typ
    RL = 50 Ω, CL = 5 pF, see Figure 23
    CS (Off )
    25
    pF typ
    CD, CS (On)
    75
    pF typ
    POWER REQUIREMENTS
    VDD = 5.5 V
    IDD
    0.003
    μA typ
    Digital inputs = 0 V or 5.5 V
    1
    μA max
    1 Guaranteed by design, not subject to production test.
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