
ADG854
Rev. 0 | Page 3 of 16
SPECIFICATIONS
VDD = 4.2 V to 5.5V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
+25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
0.8
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA; see Figure 16 0.85
1
Ω max
On Resistance Match Between Channels, RON
0.02
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA
0.04
Ω max
On Resistance Flatness, RFLAT (ON)
0.17
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA
0.23
Ω max
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±10
pA typ
VS = 0.6 V/4.2 V, VD = 4.2 V/0.6 V; see Figure 17 Channel On Leakage, ID, IS (On)
±30
pA typ
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.002
μA typ
VIN = VGND or VDD
0.05
μA max
Digital Input Capacitance, CIN
2.5
pF typ
tON
17
ns typ
RL = 50 Ω, CL = 35 pF
23
28
ns max
tOFF
6
ns typ
RL = 50 Ω, CL = 35 pF
8.5
9.2
ns max
Break-Before-Make Time Delay, tBBM
14
ns typ
RL = 50 Ω, CL = 35 pF
8
ns min
Charge Injection
30
pC typ
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 21 Off Isolation
75
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22 Channel-to-Channel Crosstalk
85
dB typ
S1A to S2A/S1B to S2B, RL = 50 Ω, CL = 5 pF,
73
dB typ
S1A to S1B/S2A to S2B, RL = 50 Ω, CL = 5 pF,
Total Harmonic Distortion + Noise, THD + N
0.08
% typ
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3.5 V p-p
Insertion Loss
0.06
dB typ
3 dB Bandwidth
100
MHz typ
CS (Off )
19.5
pF typ
CD, CS (On)
50
pF typ
POWER REQUIREMENTS
VDD = 5.5 V
IDD
0.002
μA typ
Digital inputs = 0 V or 5.5 V
1.0
μA max
1 Guaranteed by design, not subject to production test.