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參數(shù)資料
| 型號(hào)： | ADG658 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | +3 V/+5 V/【5 V CMOS 4-/8-Channel Analog Multiplexers |
| 中文描述： | 3伏/ 5伏/【5伏的CMOS 4-/8-Channel模擬多路復(fù)用器 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 549K |
| 代理商： | ADG658 |
–2–
ADG658/ADG659–SPECIFICATIONS
DUAL SUPPLY
1
(V
DD
= +5 V ±10%, V
SS
= –5 V ±10%, GND = 0 V, unless otherwise noted.)
B Version
–40
C
to +85
C
Y Version
–40
C
to +125
C
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
+25
C
Unit
Test Conditions/Comments
V
SS
to V
DD
V
typ
max
typ
max
typ
max
V
DD
= +4.5 V, V
SS
= –4.5 V
V
S
= ±4.5 V, I
S
= 1 mA;
Test Circuit 1
45
75
1.3
3
10
16
90
100
On Resistance Match between
Channels ( R
ON
)
On Resistance Flatness (
R
FLAT(ON)
)
3.2
3.5
V
S
= 3.5 V, I
S
= 1 mA
V
DD
= +5 V, V
SS
= –5 V;
V
S
= ±3 V, I
S
= 1 mA
V
DD
= +5.5 V, V
SS
= –5.5 V
V
D
= ±4.5 V, V
S
=
4.5 V;
Test Circuit 2
V
D
= ±4.5 V, V
S
=
4.5 V;
Test Circuit 3
17
18
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
±0.005
±0.2
±0.005
±0.2
±0.1
±0.005
±0.2
±0.1
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
±5
Drain OFF Leakage I
D
(OFF)
ADG658
ADG659
Channel ON Leakage I
D
, I
S
(ON)
ADG658
ADG659
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
or I
INL
INH
±5
±2.5
V
D
= V
S
= ±4.5 V; Test Circuit 4
±5
±2.5
2.4
0.8
V min
V max
0.005
μA typ
μA max
pF typ
V
IN
= V
or V
INL
INH
±1
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
TRANS
2
80
115
80
115
30
45
50
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
R
= 300
L
V
S
= 3 V; Test Circuit 5
R
= 300
L
, C
= 35 pF
V
S
= 3 V; Test Circuit 7
R
= 300
L
, C
= 35 pF
V
S
= 3 V; Test Circuit 7
R
= 300
L
, C
= 35 pF
V
S1
= V
S2
= 3 V; Test Circuit 6
V
S
= 0 V, R
S
= 0
,
C
= 1 nF; Test Circuit 8
L
R
= 50
L
, C
= 5 pF,
L
f = 1 MHz; Test Circuit 9
R = 600
, 2 V p-p,
f = 20 Hz to 20 kHz
R
= 50
L
, C
= 5 pF,
L
f = 1 MHz; Test Circuit 11
, C
= 35 pF
L
140
165
t
ON
(
EN
)
L
140
165
t
OFF
(
EN
)
L
50
55
Break-Before-Make Time Delay, t
BBM
L
10
Charge Injection
2
4
–90
Off Isolation
Total Harmonic Distortion, THD + N
0.025
% typ
Channel-to-Channel Crosstalk
(
ADG659)
–3 dB Bandwidth
ADG658
ADG659
C
S
(OFF)
C
D
(OFF)
ADG658
ADG659
C
D
, C
S
(ON)
ADG658
ADG659
POWER REQUIREMENTS
I
DD
–90
dB typ
210
400
4
MHz typ
MHz typ
pF typ
R
= 50
L
Test Circuit 10
f = 1 MHz
, C
= 5 pF;
L
23
12
pF typ
pF typ
f = 1 MHz
f = 1 MHz
28
16
pF typ
pF typ
f = 1 MHz
f = 1 MHz
V
DD
= +5.5 V, V
SS
= –5.5 V
Digital Inputs = 0 V or 5.5 V
0.01
μA typ
μA max
μA typ
μA max
1
I
SS
0.01
Digital Inputs = 0 V or 5.5 V
1
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C. Y Version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
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