參數(shù)資料
型號(hào): ADG611
廠商: Analog Devices, Inc.
英文描述: 1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST Switches
中文描述: 1件Chanrge注射劑,100功率放大器泄漏,的CMOS -5第V / 5伏/ 3伏四路SPST開(kāi)關(guān)
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 152K
代理商: ADG611
REV. 0
–5–
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
Analog Inputs
2
. . . . . . . . . . . . . . . V
SS
– 0.3 V to V
DD
+ 0.3 V
Digital Inputs
2
. . . . . . . . . . . . . GND – 0.3 V to V
DD
+ 0.3 V
or 30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 10 mA
3 V operation 85
°
C to 125
°
C . . . . . . . . . . . . . . . . . 7.5 mA
Operating Temperature Range
Automotive (Y Version) . . . . . . . . . . . . . . –40
°
C to +125
°
C
ORDERING GUIDE
Model
Temperature Range
–40
°
C to +125
°
C
–40
°
C to +125
°
C
–40
°
C to +125
°
C
Package Description
Package Option
ADG611YRU
ADG612YRU
ADG613YRU
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
RU-16
RU-16
RU-16
PIN CONFIGURATIONS
TOP VIEW
(Not to Scale)
1
NC = NO CONNECT
IN1
ADG611
ADG612
ADG613
2
D1
3
S1
4
V
SS
5
GND
6
S4
7
D4
8
IN4
16
15
14
13
12
11
10
9
IN2
D2
S2
V
DD
NC
S3
D3
IN3
Table I. ADG611/ADG612 Truth Table
ADG611 In
ADG612 In
Switch Condition
0
1
1
0
ON
OFF
Table II. ADG613 Truth Table
Logic
Switch 1, 4
Switch 2, 3
0
1
OFF
ON
ON
OFF
Storage Temperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150
°
C
16-Lead TSSOP,
θ
JA
Thermal Impedance . . . . . . . 150.4
°
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG611/ADG612/ADG613 features proprietary ESD protection circuitry, permanent dam-
age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ADG611/ADG612/ADG613
相關(guān)PDF資料
PDF描述
ADG611YRU 1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST Switches
ADG612 1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST Switches
ADG613 1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST Switches
ADG620BRM CMOS +-5 V/ +5V 4 OHM SINGLE SPDT SWITCHES
ADG620BRT CMOS +-5 V/ +5V 4 OHM SINGLE SPDT SWITCHES
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