VDD = +15 V ± 10%, V
參數(shù)資料
型號: ADG508FBRUZ
廠商: Analog Devices Inc
文件頁數(shù): 14/20頁
文件大小: 0K
描述: IC MULTIPLEXER 8X1 16TSSOP
標準包裝: 96
功能: 多路復用器
電路: 1 x 8:1
導通狀態(tài)電阻: 270 歐姆
電壓電源: 雙電源
電壓 - 電源,單路/雙路(±): ±15V
電流 - 電源: 100nA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
供應商設備封裝: 16-TSSOP
包裝: 管件
ADG508F/ADG509F
Rev. F | Page 3 of 20
SPECIFICATIONS
DUAL SUPPLY
VDD = +15 V ± 10%, VSS = 15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version
Parameter
+25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VSS + 1.4
V typ
Output open circuit
VDD 1.4
V typ
VSS + 2.2
V typ
Output loaded, 1 mA
VDD – 2.2
V typ
RON
270
350
Ω typ
10 V ≤ VS ≤ +10 V, IS = 1 mA;
390
Ω max
VDD = +15 V ± 10%, VSS = 15 V ± 10%
RON Drift
0.6
%/°C typ
VS = 0 V, IS = 1 mA
On-Resistance Match Between
Channels, RON
3
% max
VS = ±10 V, IS = 1 mA
LEAKAGE CURRENTS
Source Off Leakage IS (Off )
±0.02
nA typ
VD = ±10 V, VS = +10 V;
±1
±50
nA max
Drain Off Leakage ID (Off )
±0.04
nA typ
VD = ±10 V, VS = +10 V;
±1
±60
nA max
±1
±30
nA max
Channel On Leakage ID, IS (On)
±0.04
nA typ
VS = VD = ± 10 V;
±1
±60
nA max
±1
±30
nA max
FAULT
Source Leakage Current IS (Fault)
±0.02
nA typ
VS = +55 V or 40 V, VD = 0 V, see Figure 25
(With Overvoltage)
±2
μA max
Drain Leakage Current ID (Fault)
±5
nA typ
VS = ±25 V, VD = +10 V, see Figure 23
(With Overvoltage)
±2
μA max
Source Leakage Current IS (Fault)
(Power Supplies Off )
±1
nA typ
VS = ±25 V, VD = VEN = A0, A1, A2 = 0 V
±2
μA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
±1
μA max
VIN = 0 or VDD
CIN, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS1
tTRANSITION
175
ns typ
RL = 1 MΩ, CL = 35 pF;
220
300
ns max
VS1 = ±10 V, VS8 = +10 V; see Figure 27
tOPEN
90
ns typ
RL = 1 kΩ, CL = 35 pF;
60
40
ns min
VS = 5 V; see Figure 28
tON (EN)
180
ns typ
RL = 1 kΩ, CL = 35 pF;
230
300
ns max
VS = 5 V; see Figure 29
tOFF (EN)
100
ns typ
RL = 1 kΩ, CL = 35 pF
130
150
tSETT, Settling Time
ns max
VS = 5 V; see Figure 29
0.1%
1
μs typ
RL = 1 kΩ, CL = 35 pF;
0.01%
2.5
μs typ
VS = 5 V
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