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參數(shù)資料
| 型號： | ADG1407BRUZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MULTIPLEXER 8X1 28TSSOP |
| 產(chǎn)品培訓(xùn)模塊： | Switch Fundamentals |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 系列： | iCMOS® |
| 功能： | 多路復(fù)用器 |
| 電路： | 1 x 8:1 |
| 導(dǎo)通狀態(tài)電阻： | 21.5 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 16.5 V，±2.25 V ~ 8.25 V |
| 電流 - 電源： | 150µA |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 28-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 28-TSSOP |
| 包裝： | 帶卷 (TR) |
ADG1406/ADG1407
Rev. A | Page 4 of
20
Parameter
+25°C
40°C to
+85°C
40°C to
+125°C1
Unit
Test Conditions/Comments
CD, CS (On)
ADG1406
115
pF typ
f = 1 MHz
ADG1407
70
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = +16.5 V, VSS = 16.5 V
IDD
0.002
μA typ
Digital inputs = 0 V or VDD
1
μA max
IDD
280
μA typ
Digital inputs = 5 V
475
μA max
ISS
0.002
μA typ
Digital inputs = 0 V, 5 V or VDD
1
μA max
VDD/VSS
±4.5/±16.5
V min/max
1 Temperature range for B version is
40°C to +125°C.
2 Guaranteed by design, not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
+25°C
40°C to
+85°C
40°C to
+125°C1
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance (RON)
18
Ω typ
VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,
21.5
26
28.5
Ω max
On-Resistance Match Between
0.55
Ω typ
VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,
Channels (ΔRON)
1.2
1.6
1.8
Ω max
IS = 10 mA
On-Resistance Flatness (RFLAT(ON))
5
Ω typ
VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,
6
6.9
7.3
Ω max
IS = 10 mA
LEAKAGE CURRENTS
VDD = 10.8 V
Source Off Leakage, IS (Off )
±0.01
nA typ
VS = 1 V/10 V, VD = 10 V/1 V; see
±0.25
±1
±4
nA max
Drain Off Leakage, ID (Off )
±0.01
nA typ
VS = 1 V/10 V, VD = 10 V/1 V; see
±0.5
±3
±20
nA max
Channel On Leakage, ID, IS (On)
±0.01
nA typ
±0.5
±3
±20
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
±0.002
μA typ
VIN = VGND or VDD
±0.1
μA max
Digital Input Capacitance, CIN
4
pF typ
DYNAMIC CHARACTERISTICS2
Transition Time, tTRANSITION
170
ns typ
RL = 100 Ω, CL = 35 pF
250
310
350
ns max
Break-Before-Make Time Delay, tBBM
75
ns typ
RL = 100 Ω, CL = 35 pF
30
ns min
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