參數(shù)資料
型號: ADF4207
廠商: Analog Devices, Inc.
英文描述: Dual PLL Frequency Synthesizer(雙鎖相環(huán)頻率合成器)
中文描述: 雙鎖相環(huán)頻率合成器(雙鎖相環(huán)頻率合成器)
文件頁數(shù): 4/5頁
文件大?。?/td> 104K
代理商: ADF4207
Prelimnary Technical Data
TIMNGCHARACTERISTICS
ADF4206/ADF4207/ADF4208
REV.PrD 07/99
–4–
PRELMNARY
DATA
V
P
to V
DD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. – 0.3 V to +7 V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to V
CC
+ 0.3 V
Analog I/O Voltage to GND . . . . . . . . –0.3 V to V
P
+ 0.3 V
Operating T emperature Range
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C
Storage T emperature Range . . . . . . . . . . . –65°C to +150°C
Maximum Junction T emperature . . . . . . . . . . . . . . . +150°C
T SSOP
θ
JA
T hermal Impedance . . . . . . . . . . . . . T BD°C /W
TECHNCAL
1. Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Limit at
T
MIN
to T
MAX
(B Version)
Parameter
Units
Test Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
50
10
50
50
50
50
ns min
ns min
ns min
ns min
ns min
ns min
DAT A to CLOCK Set Up T ime
DAT A to CLOCK Hold T ime
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Set Up T ime
LE Pulse Width
NOT E
Guaranteed by Design but not Production T ested.
(V
DD
= +5 V 10%, +3 V ± 10%; GND = 0 V, unless otherwse noted)
Figure 1. Timing Diagram
CLOCK
DB21
(MSB)
DB20
DB2
DB1
(CONTROL BIT C2)
t
5
DATA
LE
LE
DB0(LSB)
(CONTR OL BIT C1)
t
6
t
1
t
2
3
4
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although this device features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOL UT E MAX IMUM RAT INGS
1, 2
(
T
A
= +25°C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . .–0.3 V to V
P
+0.3 V
V
P
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
Lead T emperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
2. T his device is a high-performance RF integrated circuit with an ESD rating of
< 2kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
WARNING!
ESD SENSITIVE DEVICE
ORDE RING GUIDE
Model
T emperature Range
Package Option*
ADF4206BRU
ADF4206BCHIPS
ADF4207BRU
ADF4207BCHIPS
ADF4208BRU
ADF4208BCHIPS
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
RU-16
RU-16
RU-20
*RU = T hin Shrink Small Outline Package (T SSOP).
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