參數(shù)資料
型號(hào)： ADC912A
廠商： Analog Devices, Inc.
英文描述： CMOS Microprocessor-Compatible 12-Bit A/D Converter
中文描述： 微處理器的CMOS兼容的12位A / D轉(zhuǎn)換器
文件頁(yè)數(shù)： 4/16頁(yè)
文件大?。?/td> 237K
代理商： ADC912A
REV. B
ADC912A
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADC912A features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C, unless otherwise noted)
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
SS
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V
V
REFIN
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . V
SS
to V
DD
AGND to DGND . . . . . . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
A
IN
to AGND . . . . . . . . . . . . . . . . . . . . . . . . –15 V to +15 V
Digital Input Voltage to DGND,
Pins 17, 19–21 . . . . . . . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to DGND,
Pins 4–11, 13–16, 18, 22 . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Table I. Analog Input to Digital Output Code Conversion
Analog Input Voltage
0 V to 10 V
Output Code
*
DB
11
(MSB) DB
0
(LSB)
1 1 1 1
1 1 1 1
1 1 1 1
1 1 1 1
–10 V to +10 V
+FS – 1 LSB
+FS – 1 1/2 LSB
9.9976
9.9964
9.99951
9.9927
1 1 1 1
1111
φ
0 0 0
φ
0 0 0 0
0 0 0
φ
0 0 0 0
Midscale + 1/2 LSB
Midscale
5.0012
5.0000
0.0024
0.0000
1 0 0 0
1 0 0 0
0 0 0 0
0 0 0 0
–FS + 1/2 LSB
–FS
0.0012
0.0000
–9.9976
–10.000
0 0 0 0
0 0 0 0
0 0 0 0
0 0 0 0
*
The symbol”
φ
” indicates a 0 or 1 with equal probability.
Operating Temperature Range
Extended Industrial: ADC912A/F . . . . . . . –40
°
C to +85
°
C
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300
°
C
Maximum Junction Temperature (T
J
max) . . . . . . . . . . 150
°
C
Package Power Dissipation . . . . . . . . . . . . . . (T
J
max–T
A
)/
θ
JA
Thermal Resistance
θ
JA
Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
°
C/W
SOIC-24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
°
C
ORDERING GUIDE
Temperature
Range
–40
°
C to +85
°
C
–40
°
C to +85
°
C
INL
(LSB)
±
1
±
1
Package
Option
Model
Package Description
ADC912AFP
ADC912AFS
24-Lead Narrow-Body Plastic
24-Lead Wide-Body SOIC
N-24
R-24
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