V
參數(shù)資料
型號(hào): ADA4940-1ARZ
廠商: Analog Devices Inc
文件頁(yè)數(shù): 33/33頁(yè)
文件大小: 0K
描述: IC DIFF ADC DVR 18BIT LN 8SOIC
標(biāo)準(zhǔn)包裝: 98
放大器類型: 差分
電路數(shù): 1
輸出類型: 差分
轉(zhuǎn)換速率: 95 V/µs
-3db帶寬: 260MHz
電流 - 輸入偏壓: 1.1µA
電壓 - 輸入偏移: 60µV
電流 - 電源: 1.25mA
電流 - 輸出 / 通道: 46mA
電壓 - 電源,單路/雙路(±): 3 V ~ 6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 管件
ADA4940-1/ADA4940-2
Data Sheet
Rev. C | Page 8 of 32
ABSOLUTE MAXIMUM RATINGS
Table 9.
Parameter
Rating
Supply Voltage
8 V
VOCM
±VS
Differential Input Voltage
1.2 V
Operating Temperature Range
40°C to +125°C
Storage Temperature Range
65°C to +150°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
ESD
Field Induced Charged Device Model (FICDM)
1250 V
Human Body Model (HBM)
2000 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for the device soldered on a circuit board in still air.
Table 10.
Package Type
θJA
Unit
8-Lead SOIC (Single)/4-Layer Board
158
°C/W
16-Lead LFCSP (Single)/4-Layer Board
91.3
°C/W
24-Lead LFCSP (Dual)/4-Layer Board
65.1
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4940-1/
ADA4940-2 packages is limited by the associated rise in
junction temperature (TJ) on the die. At approximately 150°C,
which is the glass transition temperature, the plastic changes its
properties. Even temporarily exceeding this temperature limit
can change the stresses that the package exerts on the die,
permanently shifting the parametric performance of the
ADA4940-1/ADA4940-2. Exceeding a junction temperature
of 150°C for an extended period can result in changes in the
silicon devices, potentially causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power dissipation is the voltage between the supply pins (±VS)
times the quiescent current (IS). The load current consists of the
differential and common-mode currents flowing to the load, as
well as currents flowing through the external feedback networks
and internal common-mode feedback loop. The internal
resistor tap used in the common-mode feedback loop places a
negligible differential load on the output. RMS voltages and
currents should be considered when dealing with ac signals.
Airflow reduces θJA. In addition, more metal directly in contact
with the package leads from metal traces, through holes, ground,
and power planes reduces the θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 8-lead SOIC (θJA =
158°C/W, single) the 16-lead LFCSP (θJA = 91.3°C/W, single)
and 24-lead LFCSP (θJA = 65.1°C/W, dual) packages on a JEDEC
standard 4-layer board. θJA values are approximations.
3.5
0
–40
–20
0
20
40
60
120
100
80
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
T
IO
N
(W
)
AMBIENT TEMPERATURE (°C)
08452-
004
0.5
1.0
1.5
2.0
2.5
3.0
ADA4940-2 (LFCSP)
ADA4940-1 (LFCSP)
ADA4940-1 (SOIC)
Figure 3. Maximum Safe Power Dissipation vs. Ambient Temperature
ESD CAUTION
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