參數(shù)資料
型號(hào): ADA4412-3ARQZ-RL
廠商: Analog Devices Inc
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 0K
描述: IC FILTER VID RGB/HD/SD 20QSOP
標(biāo)準(zhǔn)包裝: 2,500
類(lèi)型: 視頻濾波器
應(yīng)用: 機(jī)頂盒,視頻播放器
安裝類(lèi)型: 表面貼裝
封裝/外殼: 20-SSOP(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 20-QSOP
包裝: 帶卷 (TR)
ADA4412-3
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
12 V
Power Dissipation
Storage Temperature
–65°C to +125°C
Operating Temperature Range
–40°C to +85°C
Lead Temperature Range (Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for device soldered in circuit board for surface-mount
packages.
Table 4. Thermal Resistance
Package Type
θJA
Unit
20-Lead QSOP
83
°C/W
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4412-3
package is limited by the associated rise in junction temperature
(TJ) on the die. At approximately 150°C, which is the glass
transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit may change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the ADA4412-3.
Exceeding a junction temperature of 150°C for an extended
period can result in changes in the silicon devices potentially
causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). The power dissipated due to load drive
depends on the particular application. For each output, the
power due to load drive is calculated by multiplying the load
current by the associated voltage drop across the device. The
power dissipated due to all of the loads is equal to the sum of
the power dissipations due to each individual load. RMS
voltages and currents must be used in these calculations.
Airflow increases heat dissipation, effectively reducing θJA.
In addition, more metal directly in contact with the package
leads from metal traces, through-holes, ground, and power
planes reduces the θJA.
Figure 2 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 20-lead QSOP
(83°C/W) on a JEDEC standard 4-layer board. θJA values are
approximations.
05
52
8-
0
02
AMBIENT TEMPERATURE (
°C)
WA
TTS
–40
–20
0
20
40
60
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
80
Figure 2. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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